| PART |
Description |
Maker |
| W989D6DB |
Standard Self Refresh Mode
|
Winbond
|
| HYB5117405BT-70 HYB5117405BT-60 HYB5117405BT-50 HY |
-4M x 4-Bit Dynamic RAM 2k & 4k Refresh
4M x 4-Bit Dynamic RAM 2k & 4k Refresh (Hyper Page Mode- EDO)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HM51W18165J-5 HM51W18165J-6 HM51W18165J-7 HM51W181 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh
|
Hitachi Semiconductor
|
| HMD4M32M2VE HMD4M32M2VEG-5 HMD4M32M2VEG-6 |
16Mbyte(4Mx32) DRAM SIMM EDO MODE, 4K Refresh, 3.3V
|
Hanbit Electronics Co.,Ltd.
|
| HMD4M32M2EG HMD4M32M2EG-5 HMD4M32M2EG-6 |
16Mbyte(4Mx32) 72-pin SIMM EDO Mode, 4K Refresh, 5V
|
Hanbit Electronics Co.,Ltd
|
| AS4LC1M168 AS4LC1M16883C AS4LC1M16 |
1 MEG x 16 DRAM 3.3V, EDO PAGE MODE, OPTIONAL EXTENDED REFRESH
|
ASI
ETC[ETC]
AUSTIN[Austin Semiconductor]
|
| HMD2M32M4EG-5 HMD2M32M4EG-6 HMD2M32M4EG-7 HMD2M32M |
8Mbyte(2Mx32) EDO Mode, 1K Refresh 72Pin SIMM, 5V Design
|
Hanbit Electronics Co.,Ltd
|
| K4F16708112D K4F160811D-B K4F160812D K4F160812D-B |
2M x 8Bit CMOS Dynamic RAM with Fast Page Mode Data Sheet
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle.
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle.
|
Samsung Electronic
|
| K4F640812D K4F660812D K4F640812D-JCL |
8M x 8bit CMOS dynamic RAM with fast page mode. 3.3V, 4K refresh cycle.
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HMD1M32M2GL-5 HMD1M32M2GL-6 HMD1M32M2GL |
4Mbyte(1Mx32) Fast Page Mode, 1K Refresh, 72Pin SIMM, 5V Design
|
Hanbit Electronics Co.,Ltd
|
| HMD1M32M2G HMD1M32M2G-6 HMD1M32M2G-7 |
4Mbyte(1Mx32) Fast Page Mode, 1K Refresh, 72Pin SIMM, 5V Design
|
Hanbit Electronics Co.,Ltd.
|
