| PART |
Description |
Maker |
| OD-850-008 |
High Temperature GaAlAs IR Emitters
|
OptoDiode Corp
|
| OD-850-010 OD-850FHT-18 |
High-Temperature GaAlAs IR Emitters
|
OptoDiode Corp
|
| SFH4391 |
Schnelle GaAlAs-IR-Lumineszenzdiode High-Speed GaAlAs Infrared Emitter
From old datasheet system
|
Infineon
|
| EMIF06-10006F1 EMIF06-10006 |
±15kV ESD Protected, 3.3V, Full Fail-safe, Low Power, High Speed or Slew Rate Limited, RS-485/RS-422 Transceivers; Temperature Range: -40°C to 85°C; Package: 8-SOIC T&R
6 LINES EMI FILTER AND ESD PROTECTION
6 LINES EMI FILTER AND ESD PROTECTION
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| TSMF3700 |
GaAlAs/GaAlAs Infrared Emitting Diode in SMT Package
|
Vishay Siliconix
|
| 134144 |
GaAlAs / GaAlAs LED Chips (substrate removed)
|
OSA Opto Light GmbH
|
| 124141L |
GaAlAs / GaAlAs LED Chips (substrate removed)
|
OSA Opto Light GmbH
|
| 128244 |
GaAlAs / GaAlAs Chips (substrate removed)
|
OSA Opto Light GmbH
|
| 136144 |
GaAlAs / GaAlAs Chips (substrate removed)
|
OSA Opto Light GmbH
|
| 136274 |
GaAlAs / GaAlAs Chips (substrate removed)
|
OSA Opto Light GmbH
|
| 137141H |
GaAlAs / GaAlAs Chips (substrate removed)
|
OSA Opto Light GmbH
http://
|
| Q62702-P5053 SFH4860 |
GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode 660 nm
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
