| PART |
Description |
Maker |
| EM484M3244VBE EM484M3244VBE-75F EM484M3244VBE-15 E |
Programmable CAS Latency
Synchronous DRAM
|
Eorex Corporation
|
| IS43TR16640BL IS46TR16640BL |
Programmable CAS Latency
|
Integrated Silicon Solu...
|
| EM47EM1688MBB-15 EM47EM1688MBB-150E EM47EM1688MBB- |
Double DATA RATE 3 SDRAM
CAS Write Latency
|
Eorex Corporation
|
| 02-0274-0100 01-0109-0100 01-0109-01SD |
CAS-2000 Comprehensive Application System
|
JDS Uniphase Corporation
|
| KMM5362205C2W KMM5362205C2WG |
2M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KMM5361205C2WG KMM5361205C2W |
1M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| KMM5362205C2W |
2MBx36 DRAM Simm Using 1MBx16 And 4MB Quad Cas Edo
|
Samsung Semiconductor
|
| KMM5364005CK |
(KMM5364105CK / KMM5364005CK) 4MBx36 DRAM Simm Using 4MBx4 And 16MB Quad Cas
|
Samsung Semiconductor
|
| KM44C4103C KM44C4003C KM44C4003CK-6 KM44C4003CKL-6 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 60ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| LTC2436-1CGN LTC2436-1IGN LTC2436-1 LTC2436-1-15 |
2-Channel Differential Input 16-Bit No Latency ADC
2-Channel Differential Input 16-Bit No Latency DS ADC 2-CH 16-BIT DELTA-SIGMA ADC, SERIAL ACCESS, PDSO16
2-Channel Differential Input 16-Bit No Latency DS ADC
|
Linear Technology Corporation
Linear Technology, Corp.
|
| CY7C1165V18 CY7C1163V18 CY7C1161V18 CY7C1176V18 CY |
18-Mbit QDRII SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 2M X 9 QDR SRAM, 0.45 ns, PBGA165
18-Mbit QDRII SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 18兆位的国防评估报告⑩- II SRAM字突发架构（2.5周期读写延迟
18-Mbit QDR??II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| SK74168A |
16 Binary Syn / Bi-Direct Counters
|
SGS Thomson Microelectronics
|
