| PART |
Description |
Maker |
| JHV3680 JHV36 JHV3612 JHV3616 JHV3620 JHV3624 JHV3 |
High Voltage Rectifier; Package: SEE_FACTORY; IO (A): 54; IFSM (A): 1200; Vrwm (V): 28000; IR (µA): 6000; SILICON, VOLTAGE MULTIPLIER DIODE
HIGH VOLTAGE RECTIFIER ASSEMBLY
|
MICROSEMI[Microsemi Corporation]
|
| JHV37H2O PHV616 |
High Voltage Rectifier; Package: SEE_FACTORY; IO (A): 85; Vrwm (V): 20000; IR (µA): 50; 85 A, SILICON, RECTIFIER DIODE
High Voltage Rectifier; Package: SEE_FACTORY; IO (A): 15; IFSM (A): 400; Vrwm (V): 16000; IR (µA): 5000; 20 A, SILICON, RECTIFIER DIODE
|
Microsemi, Corp.
|
| STTH4L06Q STTH4L06QRL STTH4L06RL |
4 A, 600 V, SILICON, RECTIFIER DIODE, DO-15
Turbo 2 ultrafast high voltage rectifier
|
STMICROELECTRONICS
|
| STPS16170C STPS16170CB STPS16170CB-TR STPS16170CG |
High voltage power Schottky rectifier
8 A, 170 V, SILICON, RECTIFIER DIODE
|
STMicroelectronics
|
| SDHD7.5K SDHP7.5K SDHP15K SDHD15K SDHN7.5K |
STANDARD RECOVERY HIGH VOLTAGE DOUBLER AND CENTER TAPS
High Density,High Voltage,Standard Recovery Doubler Rectifier(反向电压7500V，温5℃时平均整流电流0.4A,高密高电标准恢复倍增整流
High Density,High Voltage,Standard Recovery Center Tap Rectifier(反向电压7500V，温5℃时平均整流电流0.8A,高密高电标准恢复正中心抽头整流器)
High Density,High Voltage,Standard Recovery Center Tap Rectifier(反向电压7500V，温25℃时平均整流电流0.8A,高密高电标准恢复正中心抽头整流器)
0.8 A, 7500 V, 2 ELEMENT, SILICON, SIGNAL DIODE
High Density,High Voltage,Standard Recovery Doubler Rectifier(反向电压15000V，温25℃时平均整流电流0.4A,高密高电标准恢复倍增整流 高密度，高电压，标准恢复倍流整流（反向电5000V，温25℃时平均整流电流0.4A，高密度，高电压，标准恢复倍增整流器）
|
Semtech Corporation
Semtech, Corp.
|
| SDAD102H7.5 SDAD102 SDAD102A10 SDAD102A15 SDAD102A |
2,500 to 15,000 VOLTS STANDARD RECOVERY STACKABLE HIGH VOLTAGE RECTIFIER 4 A, SILICON, RECTIFIER DIODE
|
SOLID STATE DEVICES INC
SSDI[Solid States Devices, Inc]
Solid State Devices, Inc.
|
| STTH10LCD06SG-TR STTH10LCD06D STTH10LCD06FP STTH10 |
Turbo2 ultrafast - high voltage rectifier for flat panel displays
10 A, 600 V, SILICON, RECTIFIER DIODE
|
STMicroelectronics
|
| JHV21HI2 |
High Voltage Rectifier; Package: SEE_FACTORY; IO (A): 22; Vrwm (V): 12000; IR (µA): 10; 22 A, SILICON, RECTIFIER DIODE
|
Microsemi, Corp.
|
| VB20120SG-E3-8W VB20120SG-E3-4W VF20120SG-E3-4W VI |
High-Voltage Trench MOS Barrier Schottky Rectifier
20 A, 120 V, SILICON, RECTIFIER DIODE, TO-220AB
|
Vishay Siliconix
VISHAY SEMICONDUCTORS
|
| EFM301L EFM302L EFM303L EFM304L EFM305L EFM306L EF |
3 A, 150 V, SILICON, RECTIFIER DIODE
3 A, 600 V, SILICON, RECTIFIER DIODE
SURFACE MOUNT GLASS PASSIVATED SUPER FAST SILICON RECTIFIER VOLTAGE RANGE 50 to 600 Volts CURRENT 3.0 Ampere
3 A, 200 V, SILICON, RECTIFIER DIODE
|
RECTRON LTD
Rectron Semiconductor
|
