| PART |
Description |
Maker |
| FQU11P06 FQD11P06 FQD11P06TM |
P-Channel QFET? MOSFET -60 V, -9.4 A, 185 mΩ
|
Fairchild Semiconductor
|
| TP0610K-E3 |
185 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 TO-236, 3 PIN
|
Vishay Intertechnology, Inc.
|
| MAX6754UKLD0-T MAX6755UKLD0-T MAX6756UKLD0-T MAX67 |
Vcc: 5.0 V, active timeout period: 0.02 ms, low-power single/dual-voltage window detector
Vcc: 3.0 V, active timeout period:0.02 ms, low-power single/dual-voltage window detector
Vcc: 5.0 V, active timeout period: 100 ms-320 ms, low-power, single/dual-voltage window detector
Vcc: 5.0 V, active timeout period:185 ms, low-power single/dual-voltage window detector
Vcc: 2.5 V, Vcc:1.8 V, active timeout period:185 ms, low-power single/dual-voltage window detector
Vcc: 3.3 V, Vcc: 1.8 V, active timeout period:185 ms, low-power single/dual-voltage window detector
Vcc: 3.3 V, active timeout period:0.02 ms, low-power single/dual-voltage window detector
Vcc: 3.3 V, active timeout period:185 ms, low-power single/dual-voltage window detector
Vcc: 1.8 V, active timeout period:0.02 ms, low-power single/dual-voltage window detector
Vcc: 3.0 V, active timeout period:185 ms, low-power single/dual-voltage window detector
Vcc: 1.8 V, Vcc:adj, active timeout period:185 ms, low-power single/dual-voltage window detector
|
MAXIM - Dallas Semiconductor
|
| M57774S 57774S M57774 |
185-200MHz 12.5V 30W FM MOBILE RADIO
From old datasheet system
185-200MHZ, 12.5V, 30W, FM MOBILE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| IRFBL10N60A |
N-Channel SMPS MOSFET(N娌?? 寮??妯″??垫?MOS?烘?搴??,?ㄤ?楂????C-DC杞????
HEXFET Power MOSFET
HEXFET? Power MOSFET
11 A, 600 V, 0.61 ohm, N-CHANNEL, Si, POWER, MOSFET
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 11A I(D) | TO-263VAR
|
IRF[International Rectifier]
VISHAY SILICONIX
|
| VUM33-05N VUM33-05 IXYSCORP-VUM33-05N |
Power MOSFET Stage for Boost Converters 47 A, 500 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
Power Factor Correction Modules: MOSFET
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| IRFIB7N50A IRFIB7N50APBF |
6.6 A, 500 V, 0.52 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET(Vdss=500V, Rds(on)max=0.52ohm, Id=6.6A)
HEXFET? Power MOSFET
500V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
|
IRF[International Rectifier]
|
| MAX626-TSC428 TSC426CBA TSC426CPA TSC426MJA TSC427 |
Dual Power MOSFET Driver 双电源MOSFET驱动
QUADRUPLE 2-INPUT EXCLUSIVE-OR GATES 20-LCCC -55 to 125
30V N-Channel PowerTrench MOSFET
Dual Power MOSFET Drivers
Dual-Power MOSFET Drivers
|
Maxim Integrated Produc...
Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
Maixm
MAXIM - Dallas Semiconductor
|
| IRFI634G ORFO634G |
POWER MOSFET 功率MOSFET
Power MOSFET(Vdss=250V / Rds(on)=0.45ohm / Id=5.6A)
250V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| R636-10 R758-10 R636-10-15 |
UV to Near IR (R636?0:185 to 930 nm, R758?0:160 to 930nm) Spectral Response 28mm(1-1/8 Inch) Diameter, GaAs(Cs) Photocathode, 9-stage,Side-On Type
PHOTOMULTlPLlER TUBES
|
HAMAMATSU[Hamamatsu Corporation]
Hamamatsu Photonics
|
| SI4410DYPBF SI4410DYTRPBF |
N-Channel MOSFET
10 A, 30 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA LEAD FREE, SO-8
HEXFET㈢Power MOSFET
HEXFET?Power MOSFET
|
Hypertronics, Corp.
International Rectifier
|
|
