PART |
Description |
Maker |
1N4683 1N4684 1N4717 1N4706 1N4713 1N4685 1N4694 1 |
Silicon Epitaxial Planar Z-Diodes 硅外延平面的Z -二极 Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压43V,最大反向电.01μA的硅外延平面型齐纳二极管) 硅外延平面的Z -二极管的稳定电压(典型齐纳电3V,最大反向电流降.01μA的硅外延平面型齐纳二极管 Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压12V,最大反向电.05μA的硅外延平面型齐纳二极管) 硅外延平面的Z -二极管的稳定电压(典型齐纳电12V的,最大反向电.05μA的硅外延平面型齐纳二极管 Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压14V,最大反向电.05μA的硅外延平面型齐纳二极管) 硅外延平面的Z -二极管的稳定电压(典型齐纳电14V的,最大反向电.05μA的硅外延平面型齐纳二极管 Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.7V,最大反向电.0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.4V,最大反向电.0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.0V,最大反向电.0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压1.8V,最大反向电.5μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压3.0V,最大反向电.8μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压6.2V,最大反向电0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压3.3V,最大反向电.5μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压4.3V,最大反向电.0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压8.2V,最大反向电.0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压8.7V,最大反向电.0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压10V,最大反向电.0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压6.8V,最大反向电0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压5.6V,最大反向电0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压9.1V,最大反向电.0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.2V,最大反向电.0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压4.7V,最大反向电0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压3.6V,最大反向电.5μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压7.5V,最大反向电0μA的硅外延平面型齐纳二极管) PC 5/10-G-7,62 PCV 5/ 4-G-7,62 Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压5.1V,最大反向电0μA的硅外延平面型齐纳二极管) From old datasheet system Silicon Epitaxial Planar Z?Diodes
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Vishay Intertechnology, Inc. Vishay Intertechnology,Inc. TFUNK[Vishay Telefunken]
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KS7333 KSC7333 S5C7333A |
Digital Image Stabilization and Digital Zoom Processor
|
SAMSUNG[Samsung semiconductor] Samsung Electronic
|
LC9997 LC9997G LC9997M |
1/5-Inch Frame Transfer CCD NTSC Color Image Sensor 1/5 Inch Optical Size NTSC Color Solid-State Image Device
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Sanyo Electric Co.,Ltd. SANYO[Sanyo Semicon Device]
|
C9404MC |
Integrating optical system, image sensor and circuit
|
Hamamatsu Corporation
|
S5K433CA S5K433LA |
1/4" Optical Size 640x480(VGA) 3.3V/2.8V CMOS Image Sensor
|
Samsung Electronic
|
S5K437CX |
1/4 Optical Size 640x480 (VGA) 2.8V CMOS Image Sensor
|
Samsung semiconductor
|
LC9948G |
1/5 Optical Size CCIR B/W Solid-State Image Sensor 1 / 5光学尺寸无线电咨询委员会/黑白固态图像传感器
|
Sanyo Electric Co., Ltd. SANYO[Sanyo Semicon Device]
|
MN39116AT |
Diagonal 4.5 mm (type-1/4) 270k-pixel CCD Area Image Sensor IMAGE SENSOR-CCD, SQUARE, THROUGH HOLE MOUNT Image Sensor - Surveillance Cameras(B/W)
|
Panasonic, Corp.
|
IA3004-CE10A |
Color image sensor head (300dpi) Contact Image Sensor Heads > IA-CE Series Image sensor heads for narrow-width scanners
|
Rohm CO.,LTD. ROHM[Rohm]
|
BU6568GVW-E2 BU6566GVW BU6566GVW09 BU6568GV-E2 |
SPECIALTY CONSUMER CIRCUIT, PBGA100 Camera Image Processors Compatible with JPEG Image
|
Rohm
|
LC25W4532EAJ28 LC25W4532CAJ28 LC25EW4532EAJ28 LC25 |
2.5Gb/s Buried Het Laser 175km Reach With Optional Etalon Stabilization
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Bookham, Inc.
|
H1A424M167 |
Image Signal Processor for Hyundai CMOS Image Sensor
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Hynix Semiconductor
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