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ASE730-250GU31-CGD - Read/write speed up to 500MB/s

ASE730-250GU31-CGD_8998094.PDF Datasheet


 Full text search : Read/write speed up to 500MB/s
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ASE730-250GU31-CGD Read/write speed up to 500MB/s
A-Data Technology
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Samsung Semiconductor Co., Ltd.
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Optoway Technology, Inc.
HA166102T HA166102FP HA166104FP 2-Channel Disk Read/Write Circuit 2通道磁盘写电
4-Channel Disk/Tape Read/Write Circuit
Glenair, Inc.
VM712415SSL VM712815CPOL 4-Channel Disk/Tape Read/Write Circuit
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STMicroelectronics N.V.
AM29DL640G90 AM29DL640G120 AM29DL640G70PCEN AM29DL 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory 64兆位米8 4米x 16位).0伏的CMOS只,同步写闪
64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory 4M X 16 FLASH 3V PROM, 70 ns, PBGA63
Advanced Micro Devices, Inc.
S29PL127N65GAWW02 S29PL127N65GAW003 S29PL127N65GAI 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 8M X 16 FLASH 3V PROM, 65 ns, PBGA64
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 256/128/128字节6/8/8 M中的x 16位).0伏的CMOS只同步读/写,页模式闪
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 8M X 16 FLASH 3V PROM, 70 ns, PBGA64
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 16M X 16 FLASH 3V PROM, 70 ns, PBGA84
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 16M X 16 FLASH 3V PROM, 65 ns, PBGA84
Spansion, Inc.
Spansion Inc.
SPANSION LLC
 
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