PART |
Description |
Maker |
FD1500AV-90 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE 600 A AC/DC CLAMP-ON DMM,TRMS RoHS Compliant: NA HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
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MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
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CCF-2 |
Industrial Power, Flameproof (High Temperature Coating Meets EIA RS-325-A Spec), Small Size, High Power Rating, Excellent High Frequency Characteristics, Low Noise, Low Voltage Coefficient, Tape and Reel Packaging
|
Vishay
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RFS1003 PRFS-1003-0009 PRFS-1003-0005 PRFS-1003-00 |
From old datasheet system 5.1-5.9 GHz U-NII Power Amplifier The RFS1003 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in transmit applications in the 5.1-5.9 ...
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ANADIGICS[ANADIGICS, Inc] Anadigics Inc
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NTE29 NTE30 |
50 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-3 Silicon Complementary Transistors High Power, High Current Switch
|
NTE[NTE Electronics]
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MA2830 |
IND, HIGH-POWER DENSITY, HIGH EFFICIENCY, SHIELDED Power Switching Regulators
|
Shindengen Electric Manufacturing Company, Ltd. Shindengen Electric Mfg.Co.Ltd
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AWT6111 AWT6111_REV_2.0 |
The AWT6111 is a high power high efficiency amplifier module for Dual Mode CDMA/AMPS wireless handset applications. From old datasheet system Power Amplifiers
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Anadigics Inc
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EMC21L1004 EMC21L1004GN |
High Voltage - High Power GaN-HEMT Power Amplifier Module
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EUDYNA[Eudyna Devices Inc]
|
MT5375-UV-HP |
Dimension in mm High power, high-speed, narrow beam angle, high reliablitiy
|
Marktech Corporate
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AUIRS2112S |
The AUIRS2112S is a high voltage, high speed power MOSFET and IGBT driver with independent high- and lowside referenced output channels.
|
International Rectifier
|
IRS26072DSPBF |
The IRS26072D is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.
|
International Rectifier
|
08-130097-B 08-130097 |
Compant High-Insulation Power Relay, Polarized, 10A 外形图式PFC MEGAPAC大功率(2.4KW OUTLINE DRAWING PFC MEGAPAC HIGH POWER (2.4KW)
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Vicor, Corp. VICOR[Vicor Corporation]
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W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
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CREE POWER
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