| PART |
Description |
Maker |
| IDW40G120C5B |
Revolutionary semiconductor material - Silicon Carbide
|
Infineon Technologies A...
|
| GVT73256A16 |
REVOLUTIONARY PINOUT 256K X 16
|
Galvantech
|
| KLC700 L25S700 L60S80 L60S8 L60S800 KLC125 L25S40 |
Semiconductor Fuses
CAP CER 15000PF 100V 20% X7R0805
CAP 10U00 MLC Y5V 10V0 Z 1206CS T-R
Semiconductor Fuses 半导体保险丝
16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor 半导体保险丝
|
LITTELFUSE[Littelfuse]
Littelfuse, Inc.
|
| GVT73128A8 73128A8S |
REVOLUTIONARY PINOUT 128K X 8
From old datasheet system
|
Galvantech
|
| GVT73128A16 73128A16 |
REVOLUTIONARY PINOUT 128K X 16
From old datasheet system
|
Galvantech
|
| XA3S200-4TQG144I XA3S400-4FGG456I XA3S200-4VQG100I |
XA3S200-4TQG144I FPGA, 480 CLBS, 200000 GATES, PQFP144
XA3S400-4FGG456I FPGA, 896 CLBS, 400000 GATES, PBGA456
AUTOMOTIVE FPGA, 480 CLBS, 200000 GATES, PQFP100
FPGA, 192 CLBS, 50000 GATES, PQFP100
Revolutionary 90-nanometer process technology
Revolutionary 90-nanometer process technology
|
Xilinx, Inc.
XILINX INC
|
| IS63LV102407 IS63LV1024L-10JLI IS63LV1024L-10T IS6 |
128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
|
Integrated Silicon Solution, Inc
|
| SPB11N60S5 SPB11N60S505 |
New revolutionary high voltage technology Ultra low gate charge
|
http://
|
| IS63LV1024-12T |
128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
|
Integrated Silicon Solution, Inc
|
| SPA11N60CFD SPA11N60CFD10 |
CoolMOSTM Power Transistor Features New revolutionary high voltage technology
|
Infineon Technologies AG
|
| SPP04N60S5 SPP04N60S509 |
Cool MOS Power Transistor Feature New revolutionary high voltage technology
|
Infineon Technologies AG
|
