| PART |
Description |
Maker |
| 1N957B ON0020 1N958B 1N968B 1N965B 1N963B 1N961B |
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35灏??,10V榻?撼?靛?锛?????绾崇ǔ??????)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35封装,12V齐纳电压，玻璃齐纳稳压二极管) 12 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35封装,15]V齐纳电压，玻璃齐纳稳压二极管)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35封装,20V齐纳电压，玻璃齐纳稳压二极管)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35封装,7.5V齐纳电压，玻璃齐纳稳压二极管)
From old datasheet system
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ON Semiconductor
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| 1N751A 1N755A 1N750A 1N757A 1N746A 1N749A 1N752A 1 |
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35封装,5.1V齐纳电压，玻璃齐纳稳压二极管)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35封装,7.5V齐纳电压，玻璃齐纳稳压二极管)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35封装,4.7V齐纳电压，玻璃齐纳稳压二极管)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35封装,9.1V齐纳电压，玻璃齐纳稳压二极管)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35封装,4.3V齐纳电压，玻璃齐纳稳压二极管)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35封装,5.6V齐纳电压，玻璃齐纳稳压二极管)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35封装,6.2V齐纳电压，玻璃齐纳稳压二极管)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35封装,6.8V齐纳电压，玻璃齐纳稳压二极管)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35封装,8.2V齐纳电压，玻璃齐纳稳压二极管)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35封装,10V齐纳电压，玻璃齐纳稳压二极管)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35封装,12V齐纳电压，玻璃齐纳稳压二极管)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35封装,3.3V齐纳电压，玻璃齐纳稳压二极管) 3.3 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35封装,3.9V齐纳电压，玻璃齐纳稳压二极管) 3.9 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH
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ON Semiconductor
|
| AD5325BRMZ-REEL7 AD5340 AD5341 AD5342 AD5300 AD533 |
2.5 V to 5.5 V, 500 µA, 2-Wire Interface Quad Voltage Output 12-Bit DAC in a 10-Lead MicroSOIC Package; Package: MSOP; No of Pins: 10; Temperature Range: Industrial SERIAL INPUT LOADING, 8 us SETTLING TIME, 12-BIT DAC, PDSO10
2.5 V to 5.5 V, 500 μA, 2-Wire Interface Interface
2.5 V to 5.5 V, 500 muA, 2-Wire Interface Quad Voltage Output, 8-/10-/12-Bit DACs
2.5 V to 5.5 V, 500 A, 2-Wire Interface Quad Voltage Output, 8-/10-/12-Bit DACs
2.5 V to 5.5 V, 500 μA, 2-Wire Interface Interface
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Analog Devices, Inc.
|
| APT13GP120B |
Volts:1200V VF/Vce(ON):3.6V ID(cont):13Amps|Ultrafast IGBT Family 电压200伏室的Vceon）：3.6V的身份证（续）：一三安培|超快IGBT的家
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Commonwealth Industrial, Corp.
|
| SA20AG |
500 Watt Peak Power MiniMOSORB Zener Transient Voltage Suppressors 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
|
ON Semiconductor
|
| AT84AD004 AT84XAD004TD |
Dual 8-bit 500 Msps ADC Provides 500 Msps sampling per channel or 1 Gsps sampling from one channel (interleaving mode) and integrates ...
Smart ADC. Dual 8-bit 500 Msps ADC. Temperature range ambient.
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Atmel
|
| 1N659 1N660 FDLL659 1N661 1N746 1N963 1N3600 FDLL6 |
Ultra fast low capacitance diode. Working inverse voltage 50 V.
High speed high conductance diode. Working inverse voltage 175 V.
General purpose low diode. Working inverse voltage 100V.
500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA).
General purpose low diode. Working inverse voltage 200V.
General Purpose Diodes
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Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
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| SA11CA SA10CA SA20CA SA12CA SA26CA SA120CA SA110CA |
500 Watt Transient Voltage Suppressors; Package: DO-15; No of Pins: 2; Container: Tape & Reel 500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-15
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Fairchild Semiconductor, Corp.
Diodes, Inc.
|
| UMA130A UMA120CA UMA12CA UMA11CA UMA120A UMA150A U |
ULTRAMITE SURFACE MOUNT 500 Watt Transient Voltage Suppressor 5.0 to 170 V 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
ULTRAMITE SURFACE MOUNT 500 Watt Transient Voltage Suppressor 5.0 to 170 V 500 W, BIDIRECTIONAL, SILICON, TVS DIODE
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Microsemi, Corp.
|
| AD800904 AD8009ACHIPS AD8009JRT-R2 AD8009JRT-REEL |
1 GHz, 5,500 V/?Low Distortion Amplifier
1 GHz, 5,500 V/µs Low Distortion Amplifier
1 GHz, 5,500 V/Я Low Distortion Amplifier
1 GHz, 5,500 V/ Low Distortion Amplifier
1 GHz, 5,500 V/?/a> Low Distortion Amplifier
1 GHz, 5,500 V/µs Low Distortion Amplifier; Package: SOT-23; No of Pins: 5; Temperature Range: Commercial 1 CHANNEL, VIDEO AMPLIFIER, PDSO5
1 GHz, 5,500 V/µs Low Distortion Amplifier; Package: SOIC; No of Pins: 8; Temperature Range: Industrial 1 CHANNEL, VIDEO AMPLIFIER, PDSO8
|
Analog Devices, Inc.
|
| AQV217AZ AQV210 AQV210A AQV210AX AQV210AZ AQV212 A |
PhotoMOS relay, GU (general use) type, 1-channel (form A ) type. I/O isolation: standard 1,500 VAC. Output rating: load voltage 600V, load current 50 mA. Tape and reel packing style, picked from the 4/5/6-pin side.
PhotoMOS relay, GU (general use) type, 1-channel (form A ) type. I/O isolation: reinforced 5,000 VAC. Output rating: load voltage 400V, load current 120 mA. Tape and reel packing style, picked from the 1/2/3-pin side.
PhotoMOS relay, GU (general use) type, 1-channel (form A ) type. I/O isolation: standard 1,500 VAC. Output rating: load voltage 100V, load current 320 mA. Tape and reel packing style, picked from the 1/2/3-pin side.
PhotoMOS relay, GU (general use) type, 1-channel (form A ) type. I/O isolation: standard 1,500 VAC. Output rating: load voltage 60V, load current 400 mA. Tape and reel packing style, picked from the 4/5/6-pin side.
PhotoMOS relay, GU (general use) type, 1-channel (form A ) type. I/O isolation: standard 1,500 VAC. Output rating: load voltage 60V, load current 400 mA. Tape and reel packing style, picked from the 1/2/3-pin side.
PhotoMOS relay, GU (general use) type, 1-channel (form A ) type. I/O isolation: standard 1,500 VAC. Output rating: load voltage 60V, load current 400 mA. Tube packing style.
PhotoMOS relay, GU (general use) type, 1-channel (form A ) type. I/O isolation: standard 1,500 VAC. Output rating: load voltage 350V, load current 130 mA. Tape and reel packing style, picked from the 4/5/6-pin side.
PhotoMOS relay, GU (general use) type, 1-channel (form A ) type. I/O isolation: standard 1,500 VAC. Output rating: load voltage 350V, load current 130 mA. Tape and reel packing style, picked from the 1/2/3-pin side.
GU (General Use) Type [1-Channel (Form A) Type]
PhotoMOS relay, GU (general use) type, 1-channel (form A ) type. I/O isolation: reinforced 5,000 VAC. Output rating: load voltage 400V, load current 120 mA. Tube packing style.
PhotoMOS relay, GU (general use) type, 1-channel (form A ) type. I/O isolation: reinforced 5,000 VAC. Output rating: load voltage 400V, load current 120 mA. Tape and reel packing style, picked from the 4/5/6-pin side.
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Matsushita Electric Works(Nais)
NAIS[Nais(Matsushita Electric Works)]
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