| PART |
Description |
Maker |
| S15GBU40-C S15GBU20-C S15GBU60-C S15GBU20-15 |
Voltage 200V ~800V 15.0Amp Glass passivited Bridge Rectifiers
|
SeCoS Halbleitertechnologie GmbH SeCoS Halbleitertechnol...
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| HD10 HD01 HD02 HD08 HD04 HD06 |
TRIAC-400V 25 AMP TRIAC,800V V(DRM),25A I(T)RMS,TO-220 RoHS Compliant: Yes Bridge Rectifier; Repetitive Reverse Voltage Max, Vrrm:200V; Package/Case:TO-126; Current Rating:4A; Mounting Type:Through Hole Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):40A; Gate Trigger Current (QI), Igt:25mA; Package/Case:TO-220AB RoHS Compliant: Yes Triac; Package/Case:TO-48; Current, It av:40A; Mounting Type:Through Hole; Repetitive Reverse Voltage Max, Vrrm:400V; Current Rating:40A; Voltage 0.8 Amp Single Phase Glass Passivated Bridge Rectifier 100 to 1000 Volts
|
Micro Commercial Components Corp. MCC[Micro Commercial Components] Micro Commercial Compon...
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| SPD02N80C3 |
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...
|
Infineon
|
| SPI08N80C3 |
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...
|
Infineon
|
| SPP02N80C3 |
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...
|
Infineon
|
| SCDS103 SCDS101 SCDS10112 SCDS102 |
Voltage 50V ~ 200V 1.0 Amp Surface Mount Schottky Barrier Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
| 2SC3184K 2SC3184M 2SC3184L |
TRANSISTOR | BJT | NPN | 800V V(BR)CEO | 500MA I(C) | TO-220AB SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 800V的五(巴西)总裁| 500mA的一(c)| TO - 220AB现有
|
CTS, Corp.
|
| IRFP250 IRFP250B IRFP250BFP001 |
200V N-Channel B-FET / Substitute of IRFP250 & IRFP250A 200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| NTE5869 NTE5850 NTE5866 NTE5861 NTE5863 NTE5862 NT |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A. Silicon Power Rectifier Diode 6 Amp Silicon Power Rectifier Diode, 6 Amp Silicon Power Rectifier Diode / 6 Amp Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A.
|
NTE[NTE Electronics]
|
| FQD12N20TF |
200V N-Channel QFET; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel
|
FAIRCHILD SEMICONDUCTOR CORP
|
| FQD4N20TM |
200V N-Channel QFET; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel
|
FAIRCHILD SEMICONDUCTOR CORP
|