Part Number Hot Search : 
M6698 SF188E MAS3132E LL4148 SOD323 AD9446 TS13002 AN2936
Product Description
Full Text Search

S1GVB60-C - Voltage 200V ~ 800V 1.0 Amp Glass Passivited Bridge Rectifiers

S1GVB60-C_8984267.PDF Datasheet


 Full text search : Voltage 200V ~ 800V 1.0 Amp Glass Passivited Bridge Rectifiers
 Product Description search : Voltage 200V ~ 800V 1.0 Amp Glass Passivited Bridge Rectifiers


 Related Part Number
PART Description Maker
S15GBU40-C S15GBU20-C S15GBU60-C S15GBU20-15 Voltage 200V ~800V 15.0Amp Glass passivited Bridge Rectifiers
SeCoS Halbleitertechnologie GmbH
SeCoS Halbleitertechnol...
HD10 HD01 HD02 HD08 HD04 HD06 TRIAC-400V 25 AMP
TRIAC,800V V(DRM),25A I(T)RMS,TO-220 RoHS Compliant: Yes
Bridge Rectifier; Repetitive Reverse Voltage Max, Vrrm:200V; Package/Case:TO-126; Current Rating:4A; Mounting Type:Through Hole
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):40A; Gate Trigger Current (QI), Igt:25mA; Package/Case:TO-220AB RoHS Compliant: Yes
Triac; Package/Case:TO-48; Current, It av:40A; Mounting Type:Through Hole; Repetitive Reverse Voltage Max, Vrrm:400V; Current Rating:40A; Voltage
0.8 Amp Single Phase Glass Passivated Bridge Rectifier 100 to 1000 Volts
Micro Commercial Components Corp.
MCC[Micro Commercial Components]
Micro Commercial Compon...
SPD02N80C3 for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...
Infineon
SPI08N80C3 for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...
Infineon
SPP02N80C3 for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...
Infineon
SCDS103 SCDS101 SCDS10112 SCDS102 Voltage 50V ~ 200V 1.0 Amp Surface Mount Schottky Barrier Rectifiers
SeCoS Halbleitertechnologie GmbH
2SC3184K 2SC3184M 2SC3184L TRANSISTOR | BJT | NPN | 800V V(BR)CEO | 500MA I(C) | TO-220AB
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 800V的五(巴西)总裁| 500mA的一(c)| TO - 220AB现有
CTS, Corp.
IRFP250 IRFP250B IRFP250BFP001 200V N-Channel B-FET / Substitute of IRFP250 & IRFP250A
200V N-Channel MOSFET
FAIRCHILD[Fairchild Semiconductor]
NTE5869 NTE5850 NTE5866 NTE5861 NTE5863 NTE5862 NT Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A.
Silicon Power Rectifier Diode 6 Amp
Silicon Power Rectifier Diode, 6 Amp
Silicon Power Rectifier Diode / 6 Amp
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A.
NTE[NTE Electronics]
FQD12N20TF 200V N-Channel QFET; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel
FAIRCHILD SEMICONDUCTOR CORP
FQD4N20TM 200V N-Channel QFET; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel
FAIRCHILD SEMICONDUCTOR CORP
 
 Related keyword From Full Text Search System
S1GVB60-C pnp S1GVB60-C maker S1GVB60-C MARKING S1GVB60-C baumer ivo gxmmw S1GVB60-C 中文简介
S1GVB60-C 0pam S1GVB60-C 中文简介 S1GVB60-C level converter S1GVB60-C Flash S1GVB60-C 查ic资料
 

 

Price & Availability of S1GVB60-C

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.053653955459595