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QVS212CG0R7BDHT - High Frequency Medium-High Voltage Multilayer Ceramic Capacitors for Automotive / Industrial Applications

QVS212CG0R7BDHT_8981847.PDF Datasheet


 Full text search : High Frequency Medium-High Voltage Multilayer Ceramic Capacitors for Automotive / Industrial Applications


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2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 -3A / -12V Bipolar transistor
-2A / -30V Bipolar transistor
High-gain Amplifier Transistor (?32V, ?0.3A)
General purpose transistor (50V, 0.15A)
High-voltage Amplifier Transistor (120V, 50mA)
High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz)
Power transistor (60V, 3A)
Medium power transistor (60V, 2A)
Medium power transistor (60V, 0.5A)
High-gain Amplifier Transistor (32V , 0.3A)
Medium Power Transistor (32V, 1A)
Power Transistor (80V, 1A)
Low VCE(sat) transistor (strobe flash)
High-current Gain Medium Power Transistor (20V, 0.5A)
Low frequency amplifier
4V Drive Nch MOS FET
10V Drive Nch MOS FET
2.5V Drive Nch MOS FET
4 Amps, 600 Volts N-CHANNEL POWER MOSFET
UTC
ROHM[Rohm]
FD2000DU-120 MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE 高功率,高频率,按包装类
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
NE664M04 MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
California Eastern Labs
 
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QVS212CG0R7BDHT 的参数 QVS212CG0R7BDHT Channel QVS212CG0R7BDHT specifications QVS212CG0R7BDHT number QVS212CG0R7BDHT speed
 

 

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