| PART |
Description |
Maker |
| QVS212CG0R9CDHT |
High Frequency Medium-High Voltage Multilayer Ceramic Capacitors for Automotive / Industrial Applications
|
Taiyo Yuden (U.S.A.), I...
|
| QVS212CG100JDHT |
High Frequency Medium-High Voltage Multilayer Ceramic Capacitors for Automotive / Industrial Applications
|
Taiyo Yuden (U.S.A.), I...
|
| QVS212CG0R5CDHT |
High Frequency Medium-High Voltage Multilayer Ceramic Capacitors for Automotive / Industrial Applications
|
Taiyo Yuden (U.S.A.), I...
|
| QVS107CG430JCHT |
High Frequency Medium-High Voltage Multilayer Ceramic Capacitors for Automotive / Industrial Applications
|
Taiyo Yuden (U.S.A.), I...
|
| 2SC305310 |
FOR HIGH FREQUENCY AMPLIFY, MEDIUM FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| CPH6003A12 |
High-frequency Medium-power Amplifier Applications
|
Sanyo Semicon Device
|
| NE677M04-T2-A NE677M04 |
MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
|
Duracell
CEL[California Eastern Labs]
|
| NE678M04-T2-A NE678M04 |
MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
|
CEL[California Eastern Labs]
|
| HSG2002 HSG2002TB-E |
SiGe HBT High Frequency Medium Power Amplifier
|
Renesas Electronics Corporation
|
| HSG2004 HSG2004TB-E |
SiGe HBT High Frequency Medium Power Amplifier
|
Renesas Electronics Corporation
|
| NE664M04 |
MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
|
California Eastern Labs
|
| HSG2001 HSG2001VF |
SiGe NPN Epitaxial High Frequency Medium Power Amplifier
|
Renesas Electronics Corporation
|
