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FDMA1430JP - Max rDS(on) = 90 mΩ at VGS = -4.5 V, ID = -2.9 A

FDMA1430JP_8984861.PDF Datasheet


 Full text search : Max rDS(on) = 90 at VGS = -4.5 V, ID = -2.9 A
 Product Description search : Max rDS(on) = 90 at VGS = -4.5 V, ID = -2.9 A


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N-Channel MOSFETs (>500V…900V); Package: PG-TO262-3; VDS (max): 500.0 V; Package: I2PAK (TO-262); RDS(ON) @ TJ=25°C VGS=10: 190.0 mOhm; ID(max) @ TC=25°C: 21.0 A; IDpuls (max): 63.0 A;
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ETC[ETC]
List of Unclassifed Manufacturers
FDS89161LZ Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 2.7 A
Fairchild Semiconductor
2SK3377 Low on-resistance RDS(on)1 = 44 m MAX. (VGS = 10 V, ID = 10 A)
TY Semiconductor Co., Ltd
2SK3432 Super low on-state resistance: RDS(on)1 = 4.0m MAX. (VGS= 10 V, ID = 42 A)
TY Semiconductor Co., L...
2SK3430 Super low on-state resistance: RDS(on)1 = 7.3 m MAX. (VGS= 10 V, ID = 40 A)
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2SK2112 Low on-resistance RDS(on)=1.2 MAX. VGS=4.0V,ID=0.5A High switching speed
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Low on-resistance RDS(on)=0.6 MAX.VGS=4.0V,ID=0.5A High switching speed
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JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:-50V; Zero Gate Voltage Drain Current Min, Idss:0.5mA; Zero Gate Voltage Drain Current Max, Idss:12mA; Gate-Source Cutoff Voltage Max, Vgs(off):-1.5V
INTERSIL[Intersil Corporation]
KDB3652 rDS(ON) = 14m (Typ.), VGS = 10V, ID = 61A Qg(tot) = 41nC (Typ.), VGS = 10V
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MOSFET, N, SO-8; Transistor type:MOSFET; Current, Id cont:4A; Resistance, Rds on:6.7R; Voltage, Vgs Rds on measurement:10V; Case style:SO-8 PowerPak
STMicroelectronics N.V.
意法半导
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
 
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