| PART |
Description |
Maker |
| NDT014 NDT014J23Z |
N-Channel Enhancement Mode Field Effect Transistor.7A0V.2ΩN沟道增强型场效应管（漏电.7A, 漏源电压60V，导通电.2Ω 2.7 A, 60 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 2.7A I(D) | SOT-223
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
|
| 2SA1666YI-UL 2SA1666YI-TR 2SC4903YL-UL 2SA1666YI-0 |
200 mA, 15 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Si, NPN, RF SMALL SIGNAL TRANSISTOR
100 mA, 8 V, NPN, Si, SMALL SIGNAL TRANSISTOR
0.2 A, 30 V, 7.5 ohm, P-CHANNEL, Si, POWER, MOSFET
0.2 A, 30 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET
0.2 A, 50 V, 12 ohm, P-CHANNEL, Si, POWER, MOSFET
0.2 A, 20 V, 9 ohm, P-CHANNEL, Si, POWER, MOSFET
0.2 A, 50 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET
0.2 A, 20 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET
UHF BAND, Si, RF SMALL SIGNAL, FET
3000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR
1 A, 60 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET
100 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
50 mA, 8 V, NPN, Si, SMALL SIGNAL TRANSISTOR
20 A, 60 V, 0.095 ohm, P-CHANNEL, Si, POWER, MOSFET
3 A, 100 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET
100 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
0.3 A, 100 V, 6.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-92
2 A, 20 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET
2 A, 900 V, 7 ohm, N-CHANNEL, Si, POWER, MOSFET
5 A, 30 V, 0.13 ohm, P-CHANNEL, Si, POWER, MOSFET
|
Bourns, Inc.
LEDtronics, Inc.
Integrated Device Technology, Inc.
Vishay Beyschlag
Air Cost Control
Mini-Circuits
Moeller Electric, Corp.
OSRAM GmbH
Cooper Hand Tools
KOA Speer Electronics,Inc.
ProMOS Technologies, Inc.
|
| 2SK956 2SK1010 2SK1507-01 2SK958 2SK1547-01 2SK138 |
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 4A I(D) | TO-247 晶体管| MOSFET的| N沟道| 800V的五（巴西）直| 4A条（丁）|47
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管| MOSFET的| N沟道| 500V五（巴西）直| 6A条（丁）|20
TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 3A I(D) | TO-247
MOSFET transistors
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 9A I(D) | TO-247
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
From old datasheet system
TRANSISTOR,MOSFET,N-CHANNEL,600V V(BR)DSS,9A I(D),TO-220
TRANSISTOR|MOSFET|N-CHANNEL|500VV(BR)DSS|6AI(D)|TO-220
TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,9A I(D),TO-247
|
Toshiba, Corp.
Mallory Sonalert Products, Inc.
Fuji Semiconductors, Inc.
|
| FDN342P |
P-Channel 2.5V Specified PowerTrench MOSFET
TRANSISTOR|MOSFET|P-CHANNEL|20VV(BR)DSS|2AI(D)|TO-236AB
P-Channel 2.5V Specified PowerTrench⑩ MOSFET
|
Fairchild Semiconductor
|
| SUP45N03-13L |
N-Channel Enhancement-Mode Transistor
N-Channel 30-V (D-S), 175C MOSFET
N-Channel MOSFET
N-Channel 30-V (D-S), 175C MOSFET
|
VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
|
| FDP7030BLSS62Z FDB7030BLS |
56 A, 30 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 56A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 30V的五（巴西）直|6A条（丁）|63AB
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 56A I(D) | TO-220AB
|
Fairchild Semiconductor, Corp.
ITT, Corp.
FAIRCHILD SEMICONDUCTOR CORP
|
| BUZ100SL-4 |
Quad-Channel SIPMOS Power Transistor
SIPMOS ? Power Transistor
SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated)
7.4 A, 55 V, 0.023 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28
20 characters x 1 Lines, 5x7 Dot Matric Character and Cursor 7.4 A, 55 V, 0.023 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
http://
Siemens Semiconductor Group
Infineon Technologies AG
SIEMENS AG
|
| IRLC130 IRFC214R IRFC9014R IRFC254R IRFC054R IRFC2 |
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | CHIP
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | CHIP
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | CHIP
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | CHIP 晶体管| MOSFET的| N沟道| 100V的五（巴西）决策支持系统|芯片
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | CHIP 晶体管| MOSFET的| N沟道| 200伏五（巴西）决策支持系统|芯片
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | CHIP 晶体管| MOSFET的| N沟道| 400V五（巴西）决策支持系统|芯片
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | CHIP 晶体管| MOSFET的| P通道| 100V的五（巴西）决策支持系统|芯片
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | CHIP 晶体管| MOSFET的| P通道| 200伏五（巴西）决策支持系统|芯片
|
ITT, Corp.
Amphenol, Corp.
ZETTLER electronics GmbH
Electronic Theatre Controls, Inc.
|
| IRFU214A IRFR214A |
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 2.2A I(D) | TO-251AA
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 2.2A I(D) | TO-252AA 晶体管| MOSFET的| N沟道| 250V五（巴西）直| 2.2AI（四）|52AA
|
Intersil, Corp.
|
| IRHN250 IRHN450 |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 18.5A I(D) | SMT
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8A I(D) | SMT 晶体管| MOSFET的| N沟道| 500V五（巴西）直| 8A条（丁）|贴片
|
Black Box, Corp.
|
| UPA502T PA502T G11238EJ1V0DS00 UPA502T-T1 UPA502T- |
100 mA, 50 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
From old datasheet system
MOS Field Effect Transistor
N-CHANNEL MOS FET 5-PIN 2 CIRCUITS
Silicon transistor
|
NEC Corp.
NEC[NEC]
|
|
