| PART |
Description |
Maker |
| ZXTP558L ZXTP558LSTZ |
400V PNP MEDIUM POWER HIGH VOLTAGE TRANSISTOR
|
Diodes Incorporated
|
| ZXTP08400BFF-15 |
400V PNP MEDIUM POWER HIGH VOLTAGE TRANSISTOR IN SOT23F
|
Diodes Incorporated
|
| 2SA1625 |
High voltage switch. Collector-base voltage: Vcbo = -400V. Collector-emitter voltage: Vceo = -400V. Emitter-base voltage Vebo = -7V. Collector dissipation: Pc(max) = o.75W.
|
USHA India LTD
|
| APT40M75JN APT40M90JN |
POWER MOS IV 400V 56.0A 0.075 Ohm / 400V 51.0A 0.090 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
| 2SC4505 |
High breakdown voltage. (BVCEO = 400V) Low saturation voltage
|
TY Semiconductor Co., Ltd
|
| CMPTA94 |
SMD Small Signal Transistor PNP High Voltage
SURFACE MOUNT PNP HIGH VOLTAGE SILICON TRANSISTOR
|
CENTRAL[Central Semiconductor Corp]
|
| MMBTA92 SMBTA92 SMBTA92/MMBTA92 |
High Voltage Transistors - SOT23 PNP High Voltage Transistor
PNP Silicon High Voltage Transistor
|
INFINEON[Infineon Technologies AG]
|
| 2SA1812 2SA1776 2SA1727 A1776 |
High-voltage Switching Transistor (-400V, -0.5A)
|
ROHM[Rohm]
|
| BF623 Q62702-F1053 |
PNP Silicon High-Voltage Transistor (Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| CMPT6517 CMPT6520 |
SMD Small Signal Transistor PNP High Voltage
COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTORS
|
CENTRAL[Central Semiconductor Corp]
|
| G8343-11 G8343-12 G8343-21 G8343-22 G8343-31 G8343 |
InGaAs PIN photodiode with preamp
Aluminum Snap-In Capacitor; Capacitance: 1500uF; Voltage: 160V; Case Size: 25x45 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 270uF; Voltage: 400V; Case Size: 35x25 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 180uF; Voltage: 400V; Case Size: 30x25 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 150uF; Voltage: 450V; Case Size: 25x30 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 390uF; Voltage: 200V; Case Size: 22x25 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 330uF; Voltage: 400V; Case Size: 25x45 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 1000uF; Voltage: 200V; Case Size: 25x50 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 270uF; Voltage: 400V; Case Size: 25x40 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 270uF; Voltage: 400V; Case Size: 30x30 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 270uF; Voltage: 400V; Case Size: 22x50 mm; Packaging: Bulk
Optoelectronic 光电
InGaAs PIN photodiode with preamp 铟镓砷PIN光电二极管和前置放大
|
HAMAMATSU[Hamamatsu Corporation]
NXP Semiconductors N.V.
Hamamatsu Photonics K.K.
|
