| PART |
Description |
Maker |
| PIC18LF4685T-I_SP PIC18F2682 PIC18F2682-I_ML PIC18 |
28/40/44-Pin Enhanced Flash Microcontrollers with ECAN Technology, 10-Bit A/D and nanoWatt Technology
|
MICROCHIP[Microchip Technology]
|
| IRLML6302TRPBF IRLML6302PBF07 |
HEXFET? Power MOSFET
technology, Ultra Low On-Resistance, P-Channel MOSFET
generation v technology
|
International Rectifier
|
| SIGC81T60SNC |
IGBT Chip in NPT-technology 600V NPT technology positive temperature coefficient
|
Infineon Technologies AG
|
| SIGC14T60SNC |
IGBT Chip in NPT-technology 600V NPT technology 100渭m chip short circuit prove
|
Infineon Technologies AG
|
| PIC18F4680 PIC18F4585 PIC18LF4680-I301 PIC18LF4680 |
Enhanced Flash Microcontrollers with ECAN? Technology, 10-Bit A/D and nanoWatt Technology
Enhanced Flash Microcontrollers with ECAN Technology, 10-Bit A/D and nanoWatt Technology
|
MICROCHIP[Microchip Technology]
|
| BCM847DS BCM847BS BCM847BV BCM847BV115 |
NPN/NPN matched double transistors; Package: SOT666 (SS-Mini); Container: Tape reel smd 100 mA, 45 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
NPN/NPN matched double transistors
|
NXP Semiconductors N.V.
|
| Q67040S4722 Q67040S4724 IGP30N60T IGW30N60T |
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
LOW LOSS IGBT IN TRENCH AND FILEDSTOP TECHNOLOGY
|
INFINEON[Infineon Technologies AG]
|
| LS4D28-100-RN LS4D28-270-RN LS4D28-271-RN LS4D28-3 |
Dual N-Channel EPAD Matched Pair MOSFET Array, Vgs= 0.2 V, Enhancement Mode, 8L SOIC, EPAD Enabled 1 ELEMENT, 3.9 uH, GENERAL PURPOSE INDUCTOR, SMD
Surface Mount Power Inductors 1 ELEMENT, 12 uH, GENERAL PURPOSE INDUCTOR, SMD
Dual N-Channel EPAD Matched Pair MOSFET Array, Vgs= 0.0 V, 8L PDIP, EPAD Enabled
Dual N-Channel EPAD Matched Pair MOSFET Array, Vgs= 0.4 V, Enhancement Mode, 8L PDIP, EPAD Enabled
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= 1.4 V, 16L SOIC, EPAD Enabled
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= 1.4 V, 16L PDIP, EPAD Enabled
|
http://
ICE Components, Inc.
ICE COMPONENTS INC
|
| IRF3205LTRR IRF3205S IRF3205STRR |
75 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
Advanced Process Technology
Advanced Process Technology
|
International Rectifier
|
| SW10-0313 |
DC-3 GHz, matched GaAs SPDT reflective switch
Matched GaAs SPDT Switch, DC - 3 GHz with TTL/CMOS Control Input
Matched GaAs SPDT Switch / DC - 3 GHz with TTL/CMOS Control Input
|
MA-Com
Tyco Electronics
|
| MGFK33V4045 K334045 |
14.0~14.5GHZ BAND 2W INTERNALLY MATCHED GAAS FET
From old datasheet system
14.0-14.5GHz BAND 2W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
