| PART |
Description |
Maker |
| LT1991 LT1991HMS-PBF LT1991HMS-TRPBF LT1991IDD-PBF |
Precision, 100µA Gain Selectable Amplifier; Package: DFN; No of Pins: 10; Temperature Range: -40°C to 85°C OP-AMP, 250 uV OFFSET-MAX, 0.56 MHz BAND WIDTH, PDSO10 Precision, 100µA Gain Selectable Amplifier; Package: MSOP; No of Pins: 10; Temperature Range: -40°C to 85°C OP-AMP, 200 uV OFFSET-MAX, 0.56 MHz BAND WIDTH, PDSO10 Precision, 100µA Gain Selectable Amplifier; Package: MSOP; No of Pins: 10; Temperature Range: -40° to 125°C OP-AMP, 160 uV OFFSET-MAX, 0.56 MHz BAND WIDTH, PDSO10 Precision, 100μA Gain Selectable Amplifi er Precision, 100渭A Gain Selectable Amplifi er Precision, 100楼矛A Gain Selectable Amplifi er
|
Linear Technology, Corp. http://
|
| RFHA1000 |
15W GaN WIDE-BAND POWER AMPLIFIER
|
RF Micro Devices
|
| AFS1-00120025-10-13P-4 AFS2-21202400-35-5P-2 AFS4- |
120 MHz - 250 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 21200 MHz - 24000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 500 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 6000 MHz - 12000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 100 MHz - 10000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 8000 MHz - 12000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 13200 MHz - 14000 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER 100 MHz - 4000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 2000 MHz - 8000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 7300 MHz - 8400 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
MITEQ INC
|
| TGF2023-20 |
100 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| AMF-5B-040080-15-25P AMF-4B-040080-15-25P AMF-6B-0 |
4000 MHz - 8000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 12000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 20000 MHz - 30000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 100 MHz - 4000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 8000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 500 MHz - 2000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 27500 MHz - 31000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 10 MHz - 2000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 2000 MHz - 4000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 2000 MHz - 8000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 10 MHz - 4000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 1000 MHz - 2000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER 100 MHz - 6000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 37000 MHz - 41000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
|
MITEQ, Inc. MITEQ INC
|
| 2SC5226A 2SC5226A12 ENA1062A |
RF Transistor, 10V, 70mA, fT=7GHz, NPN Single MCP VHF to UHF Wide-Band Low-Noise Amplifi er Applications
|
ON Semiconductor Sanyo Semicon Device
|
| 2731-20 |
S-Band 2700-3100 MHz; P(out) (W): 20; P(in) (W): 3; Gain (dB): 8.2; Vcc (V): 36; Pulse Width (µsec): 100; Duty Cycle (%): 10; Case Style: 55CR S BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi, Corp.
|
| 15GN01MA12 15GN01MA-TL-E ENA1100A |
VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifi er Applications
|
Sanyo Semicon Device
|
| MCH6001 |
2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR NPN Epitaxial Planar Silicon Composite Transistor High Frequency Low-Noise Amplifi er
|
Sanyo Semicon Device
|
| MGA-43628-BLKG |
High Linearity 2.0 ?2.2 GHz Power Amplifi er Module
|
AVAGO TECHNOLOGIES LIMITED
|