PART |
Description |
Maker |
2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor -2A / -30V Bipolar transistor High-gain Amplifier Transistor (?32V, ?0.3A) General purpose transistor (50V, 0.15A) High-voltage Amplifier Transistor (120V, 50mA) High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz) Power transistor (60V, 3A) Medium power transistor (60V, 2A) Medium power transistor (60V, 0.5A) High-gain Amplifier Transistor (32V , 0.3A) Medium Power Transistor (32V, 1A) Power Transistor (80V, 1A) Low VCE(sat) transistor (strobe flash) High-current Gain Medium Power Transistor (20V, 0.5A) Low frequency amplifier 4V Drive Nch MOS FET 10V Drive Nch MOS FET 2.5V Drive Nch MOS FET 4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC ROHM[Rohm]
|
RSQ035N06FRA |
Nch 60V 3.5A Small Signal MOSFET
|
Rohm
|
FDD5353 |
60V N-Channel Power Trench MOSFET; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel 11.5 A, 60 V, 0.0123 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 N-Channel Power Trench㈢ MOSFET 60V, 50A, 12.3mヘ N-Channel Power Trench? MOSFET 60V, 50A, 12.3mΩ
|
Fairchild Semiconductor, Corp.
|
IRFIZ34V IRFIZ34VPBF |
60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=60V, Rds(on)=28mohm, Id=20A) Lsolated Base Power HEX-pak Assembly Half Bridge Configuration
|
IRF[International Rectifier]
|
IRFP054V |
60V Single N-Channel HEXFET Power MOSFET in a TO-247AC package Power MOSFET(Vdss=60V, Rds(on)=9.0mohm, Id=93A?
|
Power MOSFET International Rectifier
|
IRFP048 |
60V Single N-Channel HEXFET Power MOSFET in a TO-247AC package Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=70A)
|
International Rectifier Power MOSFET
|
IRFZ44E IRFZ44EPBF |
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=60V, Rds(on)=0.023ohm, Id=48A)
|
IRF[International Rectifier]
|
IRFR9014 IRFU9014 IRFR9014TRL |
HEXFET Power MOSFET HEXFET功率MOSFET -60V Single P-Channel HEXFET Power MOSFET in a D-Pak package -60V Single P-Channel HEXFET Power MOSFET in a I-Pak package Power MOSFET(Vdss=-60V Rds(on)=0.50ohm Id=-5.1A) Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-5.1A) 功率MOSFET(减振钢板基本\u003d- 60V的,的Rds(on)\u003d 0.50ohm,身份证\u003d- 5.1A
|
IRF[International Rectifier] Samsung semiconductor International Rectifier, Corp.
|
IRF9Z24L IRF9Z24S IRF9Z24STRR IRF9Z24STRL |
-60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=-60V/ Rds(on)=0.28ohm/ Id=-11A) Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-11A)
|
IRF[International Rectifier]
|
FS5UM-9 |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE 5 A, 450 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Powerex, Inc. POWEREX[Powerex Power Semiconductors] Mitsubishi Electric Corporation
|
FS5UM-14A |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE 5 A, 700 V, 2.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Powerex, Inc. Powerex Power Semiconductors Mitsubishi Electric Corporation
|