| PART |
Description |
Maker |
| K4S561632J-UC_L50 K4S561632J-UC_L75 K4S561632J-UC_ |
256Mb J-die SDRAM Specification
16M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
64M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Samsung semiconductor
|
| NT5SV32M8AT-8B NT5SV32M8AT-75B NT5SV32M8AT-7K NT5S |
256Mb Synchronous DRAM
|
Electronic Theatre Controls, Inc.
|
| EM48AM3244VBC-75FE EM48AM3244VBC-7FE EM48AM3244VBC |
256Mb (2M×4Bank×32) Synchronous DRAM
256Mb (2M】4Bank】32) Synchronous DRAM
|
http://
Eorex Corporation
|
| EM48AM1684VBD EM48AM1684VBD-75F EM48AM1684VBD-75FE |
256Mb (4M×4Bank×16) Synchronous DRAM
|
Eorex Corporation
|
| EM48AM1684VTF-6F EM48AM1684VTF-6FE EM48AM1684VTF-7 |
256Mb (4M×4Bank×16) Synchronous DRAM
|
Eorex Corporation
|
| MT48LC64M4A203 |
SYNCHRONOUS DRAM 256Mb: x4, x8, x16 SDRAM
|
Micron Technology
|
| MT48LC64M4A299 |
Synchronous DRAM 256Mb: x4, x8, x16 SDRAM
|
Micron Technology
|
| MT48LC16M16A2 MT48LC32M8A2 MT48LC64M4A2 |
Synchronous DRAM 256Mb: x4, x8, x16 SDRAM
|
Micron Technology
|
| H57V2622GMR |
256Mb Dual Die Synchronous DRAM
|
Hynix Semiconductor
|
| H57V2582GTR |
256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O
|
Hynix Semiconductor
|
| NT256S64VH8A0GM-75B NT256S64VH8A0GM-7K NT256S64VH8 |
256Mb: 32Mx64 SDRAM module based on 16Mx16, 4Banks, 8K refresh, 3.3V synchronous DRAM with SPD
|
NANYA
|
