| PART |
Description |
Maker |
| IRFH4210D IRFH4210DTRPBF |
25V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
|
International Rectifier
|
| IRFH4213 IRFH4213TRPBF |
25V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
|
International Rectifier
|
| IRFH4213D |
25V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
|
International Rectifier
|
| IRFHM8228TRPBF |
25V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package
|
International Rectifier
|
| IDT74FCT845CSO IDT74FCT845CTP IDT74FCT845CD IDT74F |
8-Bit D-Type Latch
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 39 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 29 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 34 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number. 8位D型锁存器
9-Bit D-Type Latch 9位D型锁存器
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET ST package rated at 13 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number. 8位D型锁存器
300V Single N-Channel HEXFET Power MOSFET in a SO-8 package 9位D型锁存器
|
NXP Semiconductors N.V.
Austriamicrosystems AG
Coilcraft, Inc.
Fairchild Semiconductor, Corp.
|
| AM29F040-120/BUA AM29F040-120/BXA AM29F040-150DEB |
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRF3315S with Standard Packaging
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF3315S with Lead Free Packaging
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package; A IRLR8721PBF with Standard Packaging
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRFZ34E with Standard Packaging
100V Single N-Channel HEXFET Power MOSFET in a I-Pak package; A IRFU120Z with Standard Packaging
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package; Similar to IRFR48Z with Lead Free Packaging
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRL3803L with Lead Free Packaging
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRFZ24NS with Lead Free Packaging
x8 Flash EEPROM x8闪存EEPROM
|
Advanced Micro Devices, Inc.
|
| IRLZ24NL IRLZ24NSTRR IRLZ24NSTRL |
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
HEXFET Power MOSFET(HEXFET 功率MOS场效应管) HEXFET功率MOSFET（马鞍山的HEXFET功率场效应管
|
International Rectifier
Fairchild Semiconductor, Corp.
|
| IRF2807Z IRF2807ZS IRF2807ZL |
75V Single N-Channel HEXFET Power MOSFET in a D2Pak Package
75V Single N-Channel HEXFET Power MOSFET in a TO-262 Package
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Advanced Process Technology
|
IRF[International Rectifier]
|
| IRFB23N15 IRFSL23N15D IRFB23N15DPBF IRFS23N15D |
Power MOSFET(Vdss=150V/ Rds(on)max=0.090ohm/ Id=23A)
150V Single N-Channel HEXFET Power MOSFET in a TO-262 package
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
|
International Rectifier
|
| IRFZ44VZ IRFZ44VZL IRFZ44VZS IRFZ44VZPBF |
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=57A) 功率MOSFET（减振钢板基本\u003d 60V的，的Rds（on）\u003d 12mohm，身份证\u003d 57A条）
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30A |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
HEXFET? Power MOSFET
Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A)
600V,3.6A,N-Channel HEXFET Power MOSFET for SMPS(600V,3.6A,N沟道 HEXFET 功率MOS场效应管,用于开关模式电
Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）最大值\u003d 2.2ohm，身份证\u003d 3.6A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
