PART |
Description |
Maker |
DTC113EKFRA |
500mA/50V Digital transistor
|
Rohm
|
DTB123YCT116 |
PNP -500mA -50V Digital transistor (with built-in resistors)
|
ROHM
|
DTD113EK09 |
500mA / 50V Digital transistors (with built-in resistors)
|
Rohm
|
DTD114ES DTD114EK DTD114EK_1 DTD114EK1 |
500mA / 50V Digital transistors (with built-in resistors)
|
ROHM[Rohm]
|
DTD114GK_1 DTD114GK DTD114GK1 |
500mA / 50V Digital transistors (with built-in resistors)
|
ROHM[Rohm]
|
DTD123ES DTD123EK DTD123EK_1 DTD123EK1 |
500mA / 50V Digital transistors (with built-in resistors)
|
ROHM[Rohm]
|
D40C4 D45D2 D45D4 D45D6 D40C7 D40K4 D44D5 |
TRANSISTOR | BJT | DARLINGTON | NPN | 40V V(BR)CEO | 500MA I(C) | TO-202AC TRANSISTOR | BJT | DARLINGTON | PNP | 50V V(BR)CEO | 6A I(C) | TO-220AB TRANSISTOR | BJT | DARLINGTON | PNP | 70V V(BR)CEO | 6A I(C) | TO-220AB TRANSISTOR | BJT | DARLINGTON | PNP | 90V V(BR)CEO | 6A I(C) | TO-220AB TRANSISTOR | BJT | DARLINGTON | NPN | 50V V(BR)CEO | 500MA I(C) | TO-202 TRANSISTOR | BJT | DARLINGTON | NPN | 50V V(BR)CEO | 2A I(C) | TO-202AC TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 6A I(C) | TO-220AB 晶体管|晶体管|达林顿|叩| 80V的五(巴西)总裁| 6A条一(c)| TO - 220AB现有
|
Vishay Intertechnology, Inc.
|
1014-2 |
2 W, 28 V, 1000-1400 MHz common base transistor TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 500MA I(C) | FO-229
|
GHz Technology
|
2SA1326 2SC3341 |
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 500MA I(C) | SOT-23 TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 500MA I(C) | SOT-23 晶体管|晶体管|叩| 30V的五(巴西)总裁| 500mA的一(c)| SOT - 23封装
|
Samsung Semiconductor Co., Ltd.
|
SB05-05P-TD-E SB05-05P12 EN2999C EN2999 |
Schottky Barrier Diode, 50V, 0.5A, Low IR, Single PCP 50V, 500mA Rectifier
|
ON Semiconductor Sanyo Semicon Device
|
DTB114EK DTB114EK12 |
PNP -500mA -50V Digital Transistors (Bias Resistor Built-in Transistors)
|
Rohm
|
DTB123Y DTB123YK |
PNP -500mA -50V Digital Transistors (Bias Resistor Built-in Transistors)
|
Rohm
|