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3134-200P - Pulsed Power S-Band (Si)

3134-200P_8970332.PDF Datasheet


 Full text search : Pulsed Power S-Band (Si)
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TCAS 1030 MHz, Class C, Common Base, Pulsed; P(out) (W): 450; P(in) (W): 100; Gain (dB): 6.5; Vcc (V): 45; Pulse Width (µsec): 32; Duty Cycle (%): 2; Case Style: 55KT-1 L BAND, Si, NPN, RF POWER TRANSISTOR
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HVV1214-075 L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty for Ground Based Radar Applications
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HVVi Semiconductors, Inc.
1214-300M L-Band 1200-1400 MHz, Class C, Common Base-Pulsed; P(out) (W): 300; P(in) (W): 40; Gain (dB): 8.75; Vcc (V): 40; Pulse Width (µsec): 150; Duty Cycle (%): 10; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR
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Microsemi, Corp.
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
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Rhopoint Components, Ltd.
MDS800 RF Power Transistors: AVIONICS
MODE-S, 1030/1090 MHz, Class C, Common Base, Pulsed ; P(out) (W): 800; P(in) (W): 110; Gain (dB): 8.5; Vcc (V): 50; Pulse Width (µsec): 128; Duty Cycle (%): 2; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR
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