| PART |
Description |
Maker |
| TBOX323-835-FL-16 |
High performance DDR3L-1333 4 GB memory onboard
|
Axiomtek Co., Ltd.
|
| HB52R329E22-A6F HB52R329E22-B6F HB52R329E22-F |
256 MB Registered SDRAM DIMM 32-Mword × 72-bit, 100 MHz Memory Bus, 2-Bank Module (36 pcs of 16 M × 4 Components) PC100 SDRAM
256 MB Registered SDRAM DIMM 32-Mword 隆驴 72-bit, 100 MHz Memory Bus, 2-Bank Module (36 pcs of 16 M 隆驴 4 Components) PC100 SDRAM
|
Elpida Memory
|
| ISL6444CA ISL6444CA- ISL6444 ISL6444CA-T |
PWM Controller, Dual, VOUT =0.8V-5.5V @ 1%, DDR memory, Broadband Gateway, 300kHz, VIN 4.5V to 28V
Dual PWM Controller with DDR Memory Option for Gateway Applications
|
INTERSIL[Intersil Corporation]
|
| BR34E02NUX-WTR |
DDR/DDR2 (For memory module) SPD Memory
|
Rohm
|
| P1753-20GMB P1753-20PGMB P1753-30GMB P1753-30PGMB |
SINGLE CHIP, 40MHz CMOS MMU/COMBO 16-BIT, 256 PAGES, MEMORY MANAGEMENT UNIT, CDSO64
SINGLE CHIP, 40MHz CMOS MMU/COMBO 16-BIT, 256 PAGES, MEMORY MANAGEMENT UNIT, CPGA68
SINGLE CHIP, 40MHz CMOS MMU/COMBO 16-BIT, 256 PAGES, MEMORY MANAGEMENT UNIT, CQFP68
SINGLE CHIP, 40MHz CMOS MMU/COMBO 16-BIT, 256 PAGES, MEMORY MANAGEMENT UNIT, DIP64
16-BIT, 256 PAGES, MEMORY MANAGEMENT UNIT, CDIP64
|
Pyramid Semiconductor, Corp.
PERFORMANCE SEMICONDUCTOR CORP
|
| TF-GENE-6315-A10-01 |
Onboard VIA Mark Series Processors 533/800 MHz
|
AAEON Technology
|
| V58C2256804SC |
256 Mbit DDR SDRAM
|
ProMOS Technologies
|
| IDT72V8985 IDT72V8985DB IDT72V8985J IDT72V8985PV I |
From old datasheet system
3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 256 x 256
256 x 256 TSI, 8 I/O at 2Mbps, Variable/Constant Delay, 3.3V
|
Integrated Device Technology
IDT
|
| TF-AEC-6840-A1 TF-AEC-6840-A2 TF-AEC-6840-A3 TF-AE |
Onboard Intel? ULV Celeron? 400/650 MHz Processor
|
AAEON Technology
|
| AM28F020 AM28F021 AM28F020-120EC AM28F020-120EE AM |
3 Megabit (256 K x 8-Bit) CMOS 12.0 Volt Bulk Erase Flash Memory(509.20 k)
Rectangular Connector; Body Material:Polyester; Series:8016; Number of Contacts:38; Contact Material:Phosphor Bronze; Contact Plating:Gold Over Nickel; Gender:Male; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes
Rectangular Connector; Body Material:Polyester; Series:8016; Number of Contacts:38; Contact Material:Phosphor Bronze; Contact Plating:Gold Over Nickel; Gender:Female; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 2兆位56亩8位）的CMOS 12.0伏，整体擦除闪存
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 90 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 90 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 2兆位256亩8位）的CMOS 12.0伏，整体擦除闪存
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 200 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 150 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 120 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 200 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 150 ns, PQCC32
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
|
