| PART |
Description |
Maker |
| NTMFS08N004C |
N-Channel Shielded Gate PowerTrench MOSFET
|
ON Semiconductor
|
| FDC8601 |
N-Channel Shielded Gate PowerTrench MOSFET
|
Fairchild Semiconductor
|
| FDMC86570L |
N-Channel Shielded Gate PowerTrench MOSFET 60 V, 56 A, 4.3 m
|
Fairchild Semiconductor
|
| FDMC86340 |
80V N-Channel Shielded Gate Power TrenchMOSFET
|
Fairchild Semiconductor
|
| STS12NH3LL |
N-CHANNEL 30V - 0.008 Ohm - 12A SO-8 ULTRA LOW GATE CHARGE STripFET™ MOSFET
N-CHANNEL 30 V - 0.008 ?- 12 A SO-8 ULTRA LOW GATE CHARGE STripFET MOSFET
N-CHANNEL PowerMESH MOSFET
N-CHANNEL 30 V - 0.008 з - 12 A SO-8 ULTRA LOW GATE CHARGE STripFET⑩ MOSFET
N-CHANNEL 30 V - 0.008 з - 12 A SO-8 ULTRA LOW GATE CHARGE STripFETMOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| MGW14N60ED-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGP7N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGY25N120-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGW12N120D-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGP7N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| 558-1192 558-1192-09-00-00 558-1192-11-00-00 558-1 |
Variable Coil, Shielded, Vertical, .080μH thru 1.20mΗ
SHIELDED, 1.8 uH - 2.7 uH, VARIABLE INDUCTOR
SHIELDED, 3.9 uH - 5.6 uH, VARIABLE INDUCTOR
SHIELDED, 0.39 uH - 0.56 uH, VARIABLE INDUCTOR
|
CAMBION Electronic Components
WEARNES CAMBION LTD
|
| 558-7106 558-7106-16-00-00 558-7106-11-00-00 |
Variable Coil, Shielded, Vertical, .09μH thru 12.0mΗ
SHIELDED, 8 uH - 12 uH, VARIABLE INDUCTOR
SHIELDED, 1.2 uH - 1.8 uH, VARIABLE INDUCTOR
|
CAMBION Electronic Components
WEARNES CAMBION LTD
|
