| PART |
Description |
Maker |
| 74FCT38075S |
Extremely low RMS Additive Phase Jitter
|
Integrated Device Techn...
|
| AD736JRZ-R7 AD736JR-REEL7 AD736AQZ |
20A, 12 Vin, 1.2 Vout Step Down Converter Evaluation Module RMS TO DC CONVERTER, 0.005 MHz, PDSO8
Low Cost, Low Power, True RMS-to-DC Converter RMS TO DC CONVERTER, 0.005 MHz, PDSO8
RMS TO DC CONVERTER, 0.005 MHz, CDIP8
|
Analog Devices, Inc.
ANALOG DEVICES INC
|
| 604B 1002A 1502A 602BI 1502BI |
TRIAC|400V V(DRM)|6A I(T)RMS|TO-218VAR
TRIAC|400V V(DRM)|15A I(T)RMS|TO-218VAR
SOT23, Low-Power µP Supervisory Circuits with Battery Backup and Chip-Enable Gating
TRIAC|400V V(DRM)|10A I(T)RMS|TO-218VAR 可控硅| 400V五（DRM）的| 10A条口（T）的有效值|18VAR
|
Rochester Electronics, LLC
|
| STY16NA90 6004 |
N - CHANNEL 900V - 0.5 ohm - 16A - Max247 EXTREMELY LOW GATE CHARGE POWER MOSFET
From old datasheet system
N - CHANNEL 900V - 0.5 - 16A - Max247 EXTREMELY LOW GATE CHARGE POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| HCU65R600T |
Extremely low switching loss
|
SemiHow Co.,Ltd.
|
| STD15N60M2-EP |
Extremely low gate charge
|
STMicroelectronics
|
| MBD110DWT1 |
Extremely Low Minority Carrier Lifetime
|
TY Semiconductor Co., Ltd
|
| GFC048 |
N Channel Power MOSFET with extremely low RDS(on)
|
Gunter Seniconductor GmbH.
|
| DN100S |
Extremely low collector-to-emitter saturation voltage
|
KODENSHI KOREA CORP.
|
| AP2121AK3.2TRE1 AP2121AN3.2TRE1 AP2121AK1.5TRE1 AP |
150mA EXTREMELY LOW NOISE LDO REGULATOR
|
BCD Semiconductor Manufacturing Limited
|
