PART |
Description |
Maker |
BCP51115 |
45 V, 1 A PNP medium power transistors - Complement: BCP54 ; fT min: 115 MHz; hFE max: 250 ; hFE min: 40 ; I<sub>C</sub> max: 1000 mA; Polarity: PNP ; Ptot max: 1300 mW; VCEO max: 45 V; Package: SOT223 (SC-73); Container: Tape reel smd
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NXP SEMICONDUCTORS
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TSMBG1005C TSMBG1006C TSMBG1007C TSMBG1009C TSMBG1 |
SINGLE BIDIRECTIONAL BREAKOVER DIODE|100V V(BO) MAX|DO-215AA SINGLE BIDIRECTIONAL BREAKOVER DIODE|110V V(BO) MAX|DO-215AA SINGLE BIDIRECTIONAL BREAKOVER DIODE|145V V(BO) MAX|DO-215AA SINGLE BIDIRECTIONAL BREAKOVER DIODE|185V V(BO) MAX|DO-215AA SINGLE BIDIRECTIONAL BREAKOVER DIODE|200V V(BO) MAX|DO-215AA SINGLE BIDIRECTIONAL BREAKOVER DIODE|210V V(BO) MAX|DO-215AA SINGLE BIDIRECTIONAL BREAKOVER DIODE|215V V(BO) MAX|DO-215AA SINGLE BIDIRECTIONAL BREAKOVER DIODE|250V V(BO) MAX|DO-215AA SINGLE BIDIRECTIONAL BREAKOVER DIODE|265V V(BO) MAX|DO-215AA SINGLE BIDIRECTIONAL BREAKOVER DIODE|300V V(BO) MAX|DO-215AA SINGLE BIDIRECTIONAL BREAKOVER DIODE|350V V(BO) MAX|DO-215AA SINGLE BIDIRECTIONAL BREAKOVER DIODE|440V V(BO) MAX|DO-215AA 单双向击穿二极管| 440V五(公报)最大|的DO - 215AA
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ITT, Corp.
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TC74VHC4053AFK TC74VHC4051AFT |
Loop detection; Vin (V) max.: 24; Icc (mA) max.: 6.45; Fmax (kHz) max.: 400; Topr [Tjopr] (°C): -40 to 125; Remarks: Power factor collection; Package: DIP; Pin count: 16 Synchronous phase shift full-bridge control IC ; Vin (V) max.: 20; Icc (mA) max.: 10; Fmax (kHz) max.: 2 MHz; Topr [Tjopr] (°C): -40 to 125; Remarks: Switching regulator; Package: TSSOP; Pin count: 20
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Toshiba Corporation
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FDS4080N7 |
RELAY, 4PCO, 12VDC; Configuration, contact:4PCO; Voltage, contact DC max:30V; Voltage, coil DC nom:12V; Current, contact AC max:5A; Current, contact DC max:5A; Voltage, contact AC max:250V; Resistance, coil:160R; Material, RoHS Compliant: Yes 40V N-Channel FLMP PowerTrench MOSFET
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Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
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PMBTA92 PMBTA92215 PMBTA92-T |
100 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB PNP high-voltage transistor - Complement: PMBTA42 ; fT min: 50 MHz; hFE max:>40 ; hFE min: 40 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 300 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
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NXP Semiconductors
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4CX300Y 4CX300Y-8561 4CX300Y8561 |
RF amplifier Plate Dissipation (Max.) 400 Watts Screen Dissipation (Max.) 8 Watts Grid Dissipation (Max.) 1 Watt
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Communications & Power Industries, Inc. List of Unclassifed Manufacturers ETC
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CDH20D10NP-2R0MC CDH20D10NP-R50MC CDH20D10NP-R80MC |
Small size inductor 2.2mm Max square and 1.1mm Max height
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Sumida Corporation
|
CXT2907A |
High current (max.600mA), Low voltage (max.60V)
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TY Semiconductor Co., Ltd
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2PC4081Q 2PC4081R 2PC4081S 2PC4081 |
NPN General Purpose Transistor High current (max. 100 mA) Low voltage (max. 40 V)
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TY Semicondutor TY Semiconductor Co., Ltd
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S-10 |
10.8×10.8mm Max.(L×W), 13.0mm Max. Height. (S-10K)
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Sumida Corporation
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