| PART |
Description |
Maker |
| MK4096P-6 MK4096N-6 MK4096N-11 MK4096N-16 MK4096P- |
4096x1-bit dynamic RAM, 250ns acces time, 375ns cycle time, max. power 450mW. 4096x1-bit dynamic RAM, 350ns acces time, 500ns cycle time, max. power 320mW. 4096x1-bit dynamic RAM, 300ns acces time, 425ns cycle time, max. power 385mW.
|
Mostek
|
| CY7C1561V18-333BZC CY7C1561V18-333BZI CY7C1563V18 |
72-Mbit QDR垄芒-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 72-Mbit QDR?II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
|
Cypress Semiconductor
|
| CY7C1543V18 CY7C1543V18-300BZC CY7C1543V18-300BZI |
72-Mbit QDR垄芒-II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) 72-Mbit QDR?II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
|
Cypress Semiconductor
|
| SWE220000 |
Deep cycle battery
|
Shenzhen Sunnyway Battery Tech Co.Ltd.
|
| SWE61800 |
Deep cycle battery
|
Shenzhen Sunnyway Battery Tech Co.Ltd.
|
| SWE61500 |
Deep cycle battery
|
Shenzhen Sunnyway Battery Tech Co.Ltd.
|
| SWE121500 |
Deep cycle battery
|
Shenzhen Sunnyway Battery Tech Co.Ltd.
|
| SWE12180 |
Deep cycle battery
|
Shenzhen Sunnyway Battery Tech Co.Ltd.
|
| SWE230000 |
Deep cycle battery
|
Shenzhen Sunnyway Battery Tech Co.Ltd.
|
| SWE12200 |
Deep cycle battery
|
Shenzhen Sunnyway Battery Tech Co.Ltd.
|
| SWE122000 |
Deep cycle battery
|
Shenzhen Sunnyway Battery Tech Co.Ltd.
|
| SWE1270 |
Deep cycle battery
|
Shenzhen Sunnyway Battery Tech Co.Ltd.
|