| PART |
Description |
Maker |
| 1N5468B 1N5466B 1N5475D 1N5475C 1N5462C 1N5463A 1N |
Diode VAR Cap Single 30V 22pF 2-Pin DO-7
Diode VAR Cap Single 30V 18pF 2-Pin DO-7
Diode VAR Cap Single 30V 82pF 2-Pin DO-7
Diode VAR Cap Single 30V 8.2pF 2-Pin DO-7
Diode VAR Cap Single 30V 10pF 2-Pin DO-7
Diode VAR Cap Single 30V 20pF 2-Pin DO-7
Diode VAR Cap Single 30V 100pF 2-Pin DO-7
Diode VAR Cap Single 30V 47pF 2-Pin DO-7
Diode VAR Cap Single 30V 6.8pF 2-Pin DO-7
Diode VAR Cap Single 30V 56pF 2-Pin DO-7
|
New Jersey Semiconductors
|
| CDBV3-54C-HF |
Halogen Free Small Signal Schottky, V-RRM=30V, V-R=30V, I-O=0.2mA
|
Comchip Technology
|
| CDBUR42 CDBUR43 |
Small Signal Schottky Diodes, V-RRM=30V, V-R=30V, I-O=200mA
|
Comchip Technology
|
| NTMS4705N |
Power MOSFET 30V, 12A, Single N Channel, SO8(30V, 12A锛????OSFET)
|
ON Semiconductor
|
| 2SB1468 2SD2219 |
30V/8A High-Speed Switching Applications 30V/8A高速开关应
|
Sanyo Electric Co., Ltd.
SANYO[Sanyo Semicon Device]
|
| FDP6670AS08 FDB6670AS FDP6670AS |
30V N-Channel PowerTrench? SyncFET?/a>
30V N-Channel PowerTrench庐 SyncFET??/a>
30V N-Channel PowerTrench㈢ SyncFET⑩
|
Fairchild Semiconductor
|
| 1N5441C 1N5450C 1N5442B 1N5443C 1N5456C 1N5454B 1N |
Diode VAR Cap Single 30V 6.8pF 2-Pin DO-7
Diode VAR Cap Single 30V 33pF 2-Pin DO-7
Diode VAR Cap Single 30V 8.2pF 2-Pin DO-7
Diode VAR Cap Single 30V 10pF 2-Pin DO-7
Diode VAR Cap Single 30V 100pF 2-Pin DO-7
Diode VAR Cap Single 30V 68pF 2-Pin DO-7
Diode VAR Cap Single 30V 22pF 2-Pin DO-7
|
New Jersey Semiconductors
|
| SB007-03CP SB007-03CP-E |
30V/ 70mA Rectifier
Schottky Barrier Diode
30V, 70mA Rectifier
30V 70mA Rectifier
DIODE SCHOTTKY 30V 0.07A 3CP
|
Sanyo Semiconductor
SANYO[Sanyo Semicon Device]
|
| STS3DNF30L 6336 |
N-Channel 30V-0.055Ω-3.5A-SO-8 PowerMESH MOSFET(N沟道MOSFET) N沟道30V的，0.055Ω- 3.5A SO - 8封装PowerMESH MOSFET的（不适用沟道MOSFET的）
N - CHANNEL 30V - 0.055 - 3.5A - SO-8 PowerMESH TM MOSFET
From old datasheet system
N - CHANNEL 30V - 0.055ohm - 3.5A - SO-8 PowerMESH MOSFET
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| STT6602 |
N-Ch: 3.3A, 30V, RDS(ON) 65 m P-Ch: -2.3A, -30V, RDS(ON) 120 m N & P-Channel Enhancement Mode Mos.FET
|
SeCoS Halbleitertechnologie GmbH
|
