| PART |
Description |
Maker |
| APTDF200H60G |
FRED 50-1700V
|
Microsemi
|
| APTDF200H170G |
FRED 50-1700V
|
Microsemi
|
| APTDF200H120G |
FRED 50-1700V
|
Microsemi
|
| APTDF100H601G |
FRED 50-1700V
|
Microsemi
|
| APTDF100H20G |
FRED 50-1700V
|
Microsemi
|
| BYP102 C67047-A2071-A2 |
FRED Diode(FRED 二极 李华明二极管（弗雷德二极管）
FRED Diode (Fast recovery epitaxial diode Soft recovery characteristics)
From old datasheet system
FRED-FET Diode
|
Siemens Semiconductor G...
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| STC03DE170HP07 STC03DE170HP |
Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.33 }
Hybrid emitter switched bipolar transistor ESBT㈢ 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT庐 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT? 1700V - 3A - 0.33 W
|
ST Microelectronics
STMicroelectronics
|
| STC06IE170HV |
Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17?/a>
Emitter switched bipolar transistor ESBT 1700V - 6A - 0.15 Ohm
Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17з
|
http://
ST Microelectronics, Inc.
STMicroelectronics
|
| CM300DU-34KA |
IGBT Modules:1700V
|
Mitsubishi Electric Corporation
|
| CM50TU-34KA |
IGBT Modules:1700V
|
Mitsubishi Electric Corporation
|
| 2MBI300VN-170-50 |
IGBT MODULE (V series) 1700V / 300A / 2 in one package
|
Fuji Electric
|
