| PART |
Description |
Maker |
| TWA8-48S15 TWA8-48-5 TWA8-48S3.3 TWA8-24S5 TWA8-48 |
Hybrid emitter switched bipolar transistor ESBT® 900 V - 20 A - 0.06 Ohm
Emitter switched bipolar transistor ESBT® 1200 V - 8 A - 0.10 Ohm
Hybrid emitter switched bipolar transistor ESBT 2200 V - 7 A - 0.07 Ohm power module
Hybrid emitter switched bipolar transistor ESBT 2200 V - 3 A - 0.33 Ohm
Emitter switched bipolar transistor ESBT® 1700V - 4A - 0.17 Ohm
Hybrid emitter switched bipolar transistor ESBT 1500V - 8A - 0.075 Ohm 模拟IC
Analog IC 模拟IC
|
Bourns, Inc.
|
| 2SC5026 |
Silicon NPN Epitaxial Planar Type
Low collector-emitter saturation voltage VCE(sat). High collector-emitter voltage (Base open) VCEO
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| TD62504FN TD62502FN TD62503FN E005668 |
From old datasheet system
7ch SINGLE DRIVER : COMMON EMITTER
7ch SINGLE DRIVER(COMMON EMITTER) 7通道单一驱动程序（共发射极）
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
Toshiba, Corp.
|
| OL3450L-A-SFMUJ-S2 OL4451L-B-AFMUJ-S1 OL5451L-B-AF |
FIBER OPTIC LASER DIODE MODULE EMITTER, 1300-1320nm, PANEL MOUNT, THROUGH HOLE MOUNT, MU-J CONNECTOR
FIBER OPTIC LASER DIODE MODULE EMITTER, 1480-1500nm, PANEL MOUNT, THROUGH HOLE MOUNT, MU-J CONNECTOR
FIBER OPTIC LASER DIODE MODULE EMITTER, 1510-1530nm, PANEL MOUNT, THROUGH HOLE MOUNT, MU-J CONNECTOR
FIBER OPTIC LASER DIODE MODULE EMITTER, 1620-1640nm, PANEL MOUNT, THROUGH HOLE MOUNT, MU-J CONNECTOR
|
LAPIS SEMICONDUCTOR CO LTD
|
| STC04IE170HV |
Emitter switched bipolar transistor ESBT? 1700V - 4A - 0.17 W
Emitter switched bipolar transistor ESBT㈢ 1700V - 4A - 0.17 W
|
STMicroelectronics
|
| SFH420 SFH425 Q62702-P0330 Q62702-P1690 |
Mica Film Capacitor; Capacitance:33pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:300V
GaAs-IR-Lumineszenzdiode 0.5 in SMT-Gehuse GaAs Infrared Emitter in SMT Package
GaAs-IR-Lumineszenzdiode in SMT-Gehause GaAs Infrared Emitter in SMT Package
From old datasheet system
|
Siemens Semiconductor G...
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| MAX692 MAX692CPA MAX692EJA MAX692EPA MAX692MJA MAX |
Octal D-Type Edge Triggered Flip-Flops with 3-State Outputs 20-CFP -55 to 125 微处理器监控电路
IGBT Module; Transistor Polarity:N Channel; Collector Emitter Voltage, Vceo:1.2kV; Collector Emitter Saturation Voltage, Vce(sat):3.2V; Power Dissipation, Pd:1140W; Package/Case:Module; C-E Breakdown Voltage:1200V
From old datasheet system
POWER SUPPLY SUPERVISOR,CMOS,DIP,16PIN,PLASTIC
Microprocessor Supervisory Circuits
|
Maxim Integrated Produc...
Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
Maixm
Maxim Integrated Products Inc
MAXIM - Dallas Semiconductor
|
| C-13-001A-P-SFCHI/APC-O C-13-001A-P-SFCHI/APC-GR C |
FIBER OPTIC LASER DIODE MODULE EMITTER, 1290-1330nm, THROUGH HOLE MOUNT, FC/APC CONNECTOR HEREMATICAL SEALED PACKAGE-4
FIBER OPTIC LASER DIODE MODULE EMITTER, 1290-1330nm, THROUGH HOLE MOUNT, FC/APC CONNECTOR ROHS COMPLIANT, HEAREMATICAL SEALED PACKAGE-4
FIBER OPTIC LASER DIODE MODULE EMITTER, 1290-1330nm, THROUGH HOLE MOUNT, FC/APC CONNECTOR HERMETIC SEALED PACKAGE-4
FIBER OPTIC LASER DIODE MODULE EMITTER, 1290-1330nm, THROUGH HOLE MOUNT, ST/APC CONNECTOR
FIBER OPTIC LASER DIODE MODULE EMITTER, 1290-1330nm, THROUGH HOLE MOUNT, LC/APC CONNECTOR
FIBER OPTIC LASER DIODE MODULE EMITTER, 1290-1330nm, THROUGH HOLE MOUNT, SC/PC CONNECTOR
|
Analog Devices, Inc.
ITT, Corp.
|
| 0510-50A |
50 W, 28 V, 500-1000 MHz common emitter transistor
50 Watts, 28 Volts, Class AB Defcom 500 - 1000 MHz
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3.7A I(C) | SOT-324VAR
晶体管|晶体管|叩| 60V的五（巴西）总裁| 3.7AI（丙）|的SOT - 324VAR
500-1000 MHz, Class AB, Common Emitter; fO (MHz): 1000; P(out) (W): 50; P(in) (W): 10; Gain (dB): 7; Vcc (V): 28; ICQ (A): 0.1; Case Style: 55AV-2
|
GHZTECH[GHz Technology]
MICROSEMI POWER PRODUCTS GROUP
|
