| PART |
Description |
Maker |
| W25N01GVZEIG W25N01GVSFIG W25N01GVSFIT W25N01GVTBI |
3V 1G-BIT SERIAL SLC NAND FLASH MEMORY WITH DUAL/QUAD SPI BUFFER READ & CONTINUOUS READ
|
Winbond
|
| HEF4505B HEF4505BF HEF4505BD HEF4505BN HEF4505BP H |
64-bit, 1-bit per word random access read/write memory
From old datasheet system
64-bit/ 1-bit per word random access read/write memory
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| AM29BDD160GB17CPBE AM29BDD160GB17CPBF AM29BDD160GB |
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 16兆位 M中的x 16-bit/512亩32位）.5伏的CMOS只突发模式，双启动，同步写闪
|
Advanced Micro Devices, Inc.
|
| AM41DL3248GT45IS M41000002S M41000002L |
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM 32兆位个M × 8 2米x 16位）.0伏的CMOS只，同步写闪存和8兆位 M中的x 8-Bit/512亩x 16位），静态存储器
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM 32兆位个M × 8 2x 16位）.0伏的CMOS只，同步写闪存和8兆位 M中的x 8-Bit/512x 16位），静态存储器
|
Samsung Semiconductor Co., Ltd.
Advanced Micro Devices, Inc.
|
| AM29DL640G70PCI AM29DL640G70WHI D640G90VI AM29DL64 |
64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
|
SPANSION[SPANSION]
|
| NM93CS56 |
(MICROWIREBus Interface) 2048-Bit Serial EEPROM with Data Protect and Sequential Read
(MICROWIRE Bus Interface) 2048-Bit Serial EEPROM with Data Protect and Sequential Read
(MICROWIRE⑩ Bus Interface) 2048-Bit Serial EEPROM with Data Protect and Sequential Read
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| LE25FW418A |
4M-bit (512K×8) Serial Flash Memory with High-Density Read Mode
4M-bit (512K隆驴8) Serial Flash Memory with High-Density Read Mode
|
Sanyo Semicon Device
|
| S29JL064H60TAI002 S29JL064H70TAI002 S29JL064H60BFI |
64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory 4M X 16 FLASH 3V PROM, 60 ns, PDSO48
64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory 4M X 16 FLASH 3V PROM, 70 ns, PDSO48
64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory 4M X 16 FLASH 3V PROM, 60 ns, PBGA63
|
Spansion, Inc.
|
| AM29BDS643GT5KVAI AM29BDS643GT7KVAI AM29BDS643GT5G |
64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA44
64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 64兆位个M x 16位）的CMOS 1.8伏，只有同时写，突发模式闪存
|
Spansion Inc.
Spansion, Inc.
SPANSION LLC
|
| S29CD016G0JQFA212 S29CD032G0MFAA102 S29CD016G0MQAI |
32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
|
SPANSION
|
| E5530 |
128-Bit Read-Only IDIC for RF Identification
|
Atmel
|
