| PART |
Description |
Maker |
| Q67040S4647 SDT08S60 |
Silicon Carbide Schottky Diodes - 8A diode in TO220-2 package
Thinq SiC Schottky Diode
|
Infineon Technologies AG
|
| LSIC2SD120C05 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current
|
Littelfuse
|
| LSIC2SD120C10 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current
|
Littelfuse
|
| IDH09G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDH06G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDH16G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDW30G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| SCS210AM |
Switching loss reduced, enabling high-speed switching . (2-pin package)
SiC Schottky Barrier Diodes
|
ROHM
ROHM Co., Ltd.
|
| BAS125-06W BAS125-05W BAS125-04W BAS125W |
Schottky Diodes - RF Schottky diode for low-loss, fast-recovery, meter protection, ...
Silicon Schottky Diodes
|
INFINEON[Infineon Technologies AG]
|
| BAT15-02L BAT15-02V BAT15-04W BAT15-05W BAT15 BAT1 |
Schottky Diodes - Silicon RF Schottky diode for DBS mixer applications up to 12 GHz
RESISTOR,SMD1206,1K,1/4W,5%
Silicon Schottky Diodes 硅肖特基二极
|
INFINEON[Infineon Technologies AG]
|
| SML10SIC03NJC |
SiC SCHOTTKY DIODE
|
Seme LAB
|
| SCS215AJ |
SiC Schottky Barrier Diode
|
Rohm
|
