PART |
Description |
Maker |
2729-300P |
Pulsed Power S-Band (Si)
|
Microsemi
|
1214-110V |
Pulsed Power L-Band (Si)
|
Microsemi
|
1214-700P |
Pulsed Power L-Band (Si)
|
Microsemi
|
1214-700P1 |
Pulsed Power L-Band (Si)
|
Microsemi
|
TCS450 |
450 Watts, 45 Volts, Pulsed Avionics 1030 MHz TCAS 1030 MHz, Class C, Common Base, Pulsed; P(out) (W): 450; P(in) (W): 100; Gain (dB): 6.5; Vcc (V): 45; Pulse Width (µsec): 32; Duty Cycle (%): 2; Case Style: 55KT-1 L BAND, Si, NPN, RF POWER TRANSISTOR
|
MICROSEMI POWER PRODUCTS GROUP GHz Technology Microsemi, Corp.
|
MAPPST2933-190M |
S BAND, Si, NPN, RF POWER TRANSISTOR HERMETICALLY SEALED PACKAGE-4 Radar Pulsed Power Pallet 190W, 2.9-3.3 GHz
|
M/A-COM Technology Solutions, Inc.
|
HVV1012-100 |
L-Band Avionics Pulsed Power Transistor 1025-1150MHz, 10楼矛s Pulse, 1% Duty for DME and TCAS Applications L-Band Avionics Pulsed Power Transistor 1025-1150MHz, 10μs Pulse, 1% Duty for DME and TCAS Applications
|
HVVi Semiconductors, Inc.
|
TCS1200 |
1200 Watts, 53 Volts Pulsed Avionics at 1030 MHz L BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi, Corp.
|
HVV0912-150 HVV0912-150-EK |
L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10μs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10レs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications
|
HVVi Semiconductors, Inc.
|
1214-550P |
550 Watts - 300楼矛s, 10%, 42V L-Band Pulsed Radar 1200 - 1400 MHz 550 Watts - 300μs, 10%, 42V L-Band Pulsed Radar 1200 - 1400 MHz
|
Microsemi Corporation
|
|