| PART |
Description |
Maker |
| 2729-170 |
Pulsed Power S-Band (Si)
|
Microsemi
|
| 1214-800P |
Pulsed Power L-Band (Si)
|
Microsemi
|
| 1214-110V |
Pulsed Power L-Band (Si)
|
Microsemi
|
| 1214-370V |
Pulsed Power L-Band (Si)
|
Microsemi
|
| 1214-700P |
Pulsed Power L-Band (Si)
|
Microsemi
|
| HVV1214-025S |
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200楼矛s Pulse, 10% Duty
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty
|
HVVi Semiconductors, Inc.
|
| HVV1012-100 |
L-Band Avionics Pulsed Power Transistor 1025-1150MHz, 10楼矛s Pulse, 1% Duty for DME and TCAS Applications
L-Band Avionics Pulsed Power Transistor 1025-1150MHz, 10μs Pulse, 1% Duty for DME and TCAS Applications
|
HVVi Semiconductors, Inc.
|
| MDS150 |
150 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz
MODE-S, 1030/1090 MHz, Class C, Common Base, Pulsed ; P(out) (W): 150; P(in) (W): 20; Gain (dB): 10; Vcc (V): 50; Pulse Width (µsec): 128; Duty Cycle (%): 2; Case Style: 55AW-1 L BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi Corporation
Microsemi, Corp.
|
| MDS800 |
RF Power Transistors: AVIONICS
MODE-S, 1030/1090 MHz, Class C, Common Base, Pulsed ; P(out) (W): 800; P(in) (W): 110; Gain (dB): 8.5; Vcc (V): 50; Pulse Width (µsec): 128; Duty Cycle (%): 2; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technology
Microsemi, Corp.
|
| RFHA1023A |
250W GaN WIDE-BAND PULSED
|
RF Micro Devices
|
|
