| PART |
Description |
Maker |
| HGTP12N60B3 HGT1S12N60B3S FN4410 |
From old datasheet system
27A, 600V, UFS Series N-Channel IGBTs
27A/ 600V/ UFS Series N-Channel IGBTs
|
INTERSIL[Intersil Corporation]
|
| AOK27S60 |
600V 27A a MOS Power Transistor
|
Alpha & Omega Semiconductors
|
| HGTP12N60B3 |
27A, 600V, UFS Series N-Channel IGBTs
|
Fairchild Semiconductor
|
| HGTG12N60B3 |
27A, 600V, UFS Series N-Channel IGBTs
|
FAIRCHILD[Fairchild Semiconductor]
|
| RJK4515DPK-00T0 RJK4515DPK-12 |
450V - 27A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| APT8030JNFR |
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 800V V(BR)DSS | 27A I(D)
|
|
| SM-3-S-H-I-TL |
RF COAXIAL RELAY, SP6T, FAILSAFE, 0.27A (COIL), 12VDC (COIL), 3240mW (COIL), 6000MHz, PANEL MOUNT
|
RLC ELECTRONICS INC
|
| APT8030LVR |
POWER MOS V 800V 27A 0.300 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT5018BLL APT5018SLL |
POWER MOS 7 500V 27A 0.180 Ohm
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology
|
| IRG4PC40 IRG4PC40F IRG4PC40F-EPBF |
600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A)
49 A, 600 V, N-CHANNEL IGBT, TO-247AD TO-247AD, 3 PIN
|
IRF[International Rectifier]
Vishay Intertechnology, Inc.
|
| HUF76419S3S HUF76419P3 FN4669 |
27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET Power MOSFET 29 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
From old datasheet system
|
Intersil, Corp.
Intersil Corporation
|
