| PART |
Description |
Maker |
| 1214-300M |
Pulsed Power L-Band (Si)
|
Microsemi
|
| 3134-65M |
Pulsed Power S-Band (Si)
|
Microsemi
|
| TAN350 |
350 Watts, 50 Volts, Pulsed Avionics 960 1215 MHz 350瓦，50伏特，脉冲航空电601215兆赫
TACAN 960-1215 MHz, Class C, Common Base, Pulsed; P(out) (W): 350; P(in) (W): 70; Gain (dB): 7; Vcc (V): 50; Pulse Width (µsec): 10; Duty Cycle (%): 10; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR
350 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz
|
Electronic Theatre Controls, Inc.
Microsemi, Corp.
ETC[ETC]
List of Unclassifed Manufacturers
|
| RFHA1023 |
225W GaN WIDE-BAND PULSED POWER AMPLIFIER
|
RF Micro Devices
|
| RFHA1020 |
280W GaN WIDE-BAND PULSED POWER AMPLIFIER
|
RF Micro Devices
|
| HVV1012-060 |
L-Band Avionics Pulsed Power Transistor 1025-1150MHz, 10楼矛s Pulse, 1% Duty for DME and TCAS Apllications
L-Band Avionics Pulsed Power Transistor 1025-1150MHz, 10μs Pulse, 1% Duty for DME and TCAS Apllications
|
HVVi Semiconductors, Inc.
|
| MDS150 |
150 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz
MODE-S, 1030/1090 MHz, Class C, Common Base, Pulsed ; P(out) (W): 150; P(in) (W): 20; Gain (dB): 10; Vcc (V): 50; Pulse Width (µsec): 128; Duty Cycle (%): 2; Case Style: 55AW-1 L BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi Corporation
Microsemi, Corp.
|
| HVV1214-025 |
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200楼矛s Pulse, 10% Duty for Ground Based Radar Applications
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty for Ground Based Radar Applications
|
HVVi Semiconductors, Inc.
|
| HVV0912-150 HVV0912-150-EK |
L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10μs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications
L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10レs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications
|
HVVi Semiconductors, Inc.
|
| 1214-700P |
700 Watts - 300楼矛s, 10%, 50V L-Band Pulsed Radar 1200 - 1400 MHz
700 Watts - 300μs, 10%, 50V L-Band Pulsed Radar 1200 - 1400 MHz
|
Microsemi Corporation
|
| MDS800 |
RF Power Transistors: AVIONICS
MODE-S, 1030/1090 MHz, Class C, Common Base, Pulsed ; P(out) (W): 800; P(in) (W): 110; Gain (dB): 8.5; Vcc (V): 50; Pulse Width (µsec): 128; Duty Cycle (%): 2; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technology
Microsemi, Corp.
|
| RFHA1023A |
250W GaN WIDE-BAND PULSED
|
RF Micro Devices
|
|
