| PART |
Description |
Maker |
| 2729GN-400 |
GaN Transistors
|
Microsemi
|
| 0912GN-300V |
GaN Transistors
|
Microsemi
|
| CGH35030F |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
|
Cree, Inc.
|
| DDB-KJS |
LED GaN
|
http://
|
| CGH40025F |
25 W, RF Power GaN HEMT
|
CREE[Cree, Inc]
|
| TGA2611 TGA2611-15 |
2 to 6 GHz GaN LNA
|
TriQuint Semiconductor
|
| 383UWC |
WHITE GaN LED
|
Roithner LaserTechnik GmbH
|
| CGHV27015S-AMP1 CGHV27015S-TR |
15 W, DC - 6.0 GHz, 50 V, GaN HEMT
|
Cree, Inc
|
| PDU-G101A |
UV Enhanced GaN Detectors
|
Advanced Photonix, Inc.
|
| GX3442 |
RF POWER GAN TRANSISTOR
|
Polyfet RF Devices
|
| TGA2611-SM-15 |
2 6 GHz GaN LNA
|
TriQuint Semiconductor
|
| PDU-G101A |
UV Enhanced GaN Detectors
|
Advanced Photonix
|
|
