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PXAC201602FCV1R250 - Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880 ?1920 MHz, 2010 ?2025 MHz

PXAC201602FCV1R250_8884599.PDF Datasheet


Part No.	PXAC201602FCV1R250
Description	Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880 ?1920 MHz, 2010 ?2025 MHz
File Size	376.10K / 8 Page
Maker	Infineon Technologies A...
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