| PART |
Description |
Maker |
| SCH2815 |
MOSFET : N-Channel Silicon MOSFET MOSFET General-Purpose Switching Device
|
Sanyo Semicon Device
|
| NTE2942 |
30V N-Channel PowerTrench MOSFET 30V的N沟道的PowerTrench MOSFET
MOSFET N-Channel, Enhancement Mode High Speed Switch
|
NTE Electronics, Inc.
NTE[NTE Electronics]
|
| IRF3708SPBF IRF3708PBF IRF3708LPBF |
SMPS MOSFET HEXFET㈢Power MOSFET
SMPS MOSFET HEXFET?Power MOSFET
|
International Rectifier
|
| IRFP260PBF IRF6618TRPBF IRF6618PBF |
HEXFET? Power MOSFET
DirectFET?Power MOSFET ?
DirectFET㈢Power MOSFET ㈢
HEXFET㈢ Power MOSFET
|
International Rectifier
|
| AM29LV010B-45RJC AM29LV010B-55JC AM29LV010B-55JE A |
A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET ST Package
100V Single N-Channel HEXFET Power MOSFET in a SO-8 package
80V Single N-Channel HEXFET Power MOSFET in a SO-8 package
-40V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
20V Dual N-Bidirectional HEXFET Power MOSFET in a 6-Lead FlipFET
30V N-Channel PowerTrench MOSFET 30VN沟道的PowerTrench MOSFET
-12V Single P-Channel HEXFET Power MOSFET in a TSSOP-8 package x8闪存EEPROM
1 Mb (128K x 8) Uniform Sector, Flash Memory 128K X 8 FLASH 3V PROM, 70 ns, PQCC32
x8 Flash EEPROM x8闪存EEPROM
|
Toshiba, Corp.
Advanced Micro Devices, Inc.
Spansion, Inc.
|
| VUM33-05N VUM33-05 IXYSCORP-VUM33-05N |
Power MOSFET Stage for Boost Converters 47 A, 500 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
Power Factor Correction Modules: MOSFET
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| IRLL024NQ IRLL024NQTRPBF |
3.1 A, 55 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET
HEXFET? Power MOSFET
HEXFET㈢ Power MOSFET
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
|
International Rectifier
|
| IRFIB7N50A IRFIB7N50APBF |
6.6 A, 500 V, 0.52 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET(Vdss=500V, Rds(on)max=0.52ohm, Id=6.6A)
HEXFET? Power MOSFET
500V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
|
IRF[International Rectifier]
|
| IRFP443R IRFF430R IRF731R IRF732R IRFP442R IRFP342 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 13A I(D) | TO-204AA
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 500MA I(D) | TO-250VAR
Rugged Series Power MOSFETs - N-Channel
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2.75A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 5.5A I(D) | TO-220AB
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 4.5A I(D) | TO-220AB
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 7.7A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 8.7A I(D) | TO-247AC
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 10A I(D) | TO-204AA
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 3.3A I(D) | TO-220AB
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 5.5A I(D) | TO-204AA
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 4.5A I(D) | TO-204AA
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 4.5A I(D) | TO-204AA
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 6.8A I(D) | TO-247 晶体管| MOSFET的| N沟道| 600V的五（巴西）直| 6.8AI（四）|47
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 5.4A I(D) | TO-204AA 晶体管| MOSFET的| N沟道| 600V的五（巴西）直| 5.4AI（四）|04AA
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 4A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 500V五（巴西）直| 4A条（丁）| TO - 220AB现有
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 2.25A I(D) | TO-205AF 晶体管| MOSFET的| N沟道| 450V五（巴西）直| 2.25AI（四）|05AF
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 1.35A I(D) | TO-205AF 晶体管| MOSFET的| N沟道| 400V五（巴西）直| 1.35AI（四）|05AF
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 4A I(D) | TO-204AA
|
International Rectifier, Corp.
Intersil, Corp.
Infineon Technologies AG
Fairchild Semiconductor, Corp.
|
| IRFL4310 IRFL4310TR |
HEXFET? Power MOSFET
1.6 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA
Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=1.6A)
100V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
|
IRF[International Rectifier]
|
