| PART |
Description |
Maker |
| S558-5999-Q2 |
Xfmr Module 1000 Mbps DATACOM TRANSFORMER FOR 10/100/1000 BASE-T; ETHERNET APPLICATION(S)
|
Bel Fuse, Inc.
|
| HER507 HER504 HER505 HER508 HER502 HER503 HER501 H |
5.0 Amp High Efficient Rectiffiers 50 to 1000 Volts 5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD
|
Micro Commercial Components, Corp.
MCC[Micro Commercial Components]
|
| 0510-50A |
50 W, 28 V, 500-1000 MHz common emitter transistor
50 Watts, 28 Volts, Class AB Defcom 500 - 1000 MHz
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3.7A I(C) | SOT-324VAR
晶体管|晶体管|叩| 60V的五（巴西）总裁| 3.7AI（丙）|的SOT - 324VAR
500-1000 MHz, Class AB, Common Emitter; fO (MHz): 1000; P(out) (W): 50; P(in) (W): 10; Gain (dB): 7; Vcc (V): 28; ICQ (A): 0.1; Case Style: 55AV-2
|
GHZTECH[GHz Technology]
MICROSEMI POWER PRODUCTS GROUP
|
| PME261JA4100KR19T0 |
PME261/P561, Film, Metallized Paper, General Purpose, 1000 pF, 10%, 1000 VDC, 85C, Lead Spacing = 10.2mm
|
Kemet Corporation
|
| CMR1U-0110 CMR1U-10 CMR1U-02 CMR1U-06 CMR1U-04 |
SURFACE MOUNT ULTRA FAST RECOVERY SILICON RECTIFIER 1 AMP, 100 THRU 1000 VOLTS
1 A, 1000 V, SILICON, SIGNAL DIODE
|
Central Semiconductor Corp
|
| G1PM109NM-LF G1PM109NMLF |
Compliant with IEEE 802.3ab standard for 1000 BASE-T
1000 BASE ?T MAGNETICS MODULES
|
Bothhand USA, LP.
|
| 10A030 |
3 W, 20 V, 1000 MHz common emitter transistor
3 Watts, 20 Volts, Class A Linear to 1000 MHz
|
GHz Technology
ETC[ETC]
List of Unclassifed Manufacturers
|
| UF5408GP-AP UF5400GP11 |
3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD ROHS COMPLIANT, PLASTIC PACKAGE-2
3 Amp Ultra Fast Glass Passivated Recovery Rectifier 50 to 1000 Volts
|
Micro Commercial Components, Corp.
|
| SPD5614 SPD56142 SPD5622SM SPD5618 SPD5618SMS R000 |
1 AMP 200 Α 1000 VOLTS STANDARD RECOVERY RECTIFIER 1 A, 1000 V, SILICON, SIGNAL DIODE
1 AMP 200 ? 1000 VOLTS STANDARD RECOVERY RECTIFIER
|
http://
Solid State Devices, Inc.
SOLID STATE DEVICES INC
Solid States Devices, I...
|
| SLDB101S10 SLDB107S |
SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
1 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
|
Rectron Semiconductor
RECTRON LTD
|
| MTY14N100E_D ON2710 MTY14N100E MTY14N100 MTY14N100 |
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM TMOS14安培，功率场效应晶体000伏特的RDS（on）\u003d 0.80欧姆
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM 14 A, 1000 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
From old datasheet system
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| EMDC-17-1-75TR EMDC-17-1-75 |
5 MHz - 1000 MHz RF/MICROWAVE DIRECTIONAL COUPLER, 1.6 dB INSERTION LOSS-MAX
E-Series Coupler 5 - 1000 MHz
|
MACOM[Tyco Electronics]
|
