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RGT40NL65D -    650V 20A Field Stop Trench IGBT

RGT40NL65D_8874243.PDF Datasheet


 Full text search :    650V 20A Field Stop Trench IGBT
 Product Description search :    650V 20A Field Stop Trench IGBT


 Related Part Number
PART Description Maker
SB200-05H 50V, 20A Rectifier 50V20A条整流器
50V/ 20A Rectifier
50V 20A Rectifier
50V, 20A Rectifier Schottky Barrier Diode (Twin Type Cathode Common)
Sanyo Electric Co., Ltd.
SANYO[Sanyo Semicon Device]
164-22 163-28 163-12 164-12 164-26 164-20 164-30 1 TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 260V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 20A I(C) | STR-5/16
晶体管|晶体管|叩| 160V五(巴西)总裁|甲一c)| STR-5/16
晶体管|晶体管| npn型| 120伏特五(巴西)总裁|甲一c)| STR-5/16
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 40V的五(巴西)总裁|甲一(c)| STR-5/16
TRANSISTOR | BJT | NPN | 280V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管| npn型| 280伏特五(巴西)总裁|甲一(c)| STR-5/16
Ecliptek, Corp.
HGT1S20N35G3VL HGTP20N35G3VL HGT1S20N35G3VLS HGT1S 20A/ 350V N-Channel/ Logic Level/ Voltage Clamping IGBTs
20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs
TRANSISTOR | IGBT | N-CHAN | 380V V(BR)CES | 20A I(C) | TO-263AB
XC9536-6PC44C - NOT RECOMMENDED for NEW DESIGN
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
HUF75321D3 HUF75321D3S FN4351 20A/ 55V/ 0.036 Ohm/ N-Channel UltraFET Power MOSFETs
From old datasheet system
20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs(20A, 55V, 0.036Ω, N沟道UltraFET功率MOS场效应管)
20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs(20A, 55V, 0.036惟, N娌??UltraFET???MOS?烘?搴??)
Intersil Corporation
FAIRCHILD SEMICONDUCTOR CORP
SB200-05R 50V/ 20A Rectifier
50V, 20A Rectifier Schottky Barrier Diode (Twin Type Cathode Common)
SANYO[Sanyo Semicon Device]
FDD8424HF085A13 Dual N & P-Channel PowerTrench? MOSFET N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ
Fairchild Semiconductor
S20S60 S20S30 S20S40 S20S50 16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor 肖特基(20A30 - 60V的)
SCHOTTKY BARRIER RECTIFIERS(20A/30-60V)
SCHOTTKY BARRIER RECTIFIERS(20A,30-60V)
Mospec Semiconductor, Corp.
MOSPEC[Mospec Semiconductor]
SRJ23A3BBBNN Rocker Switch; Circuitry:SPST-NO; Switch Operation:On-On; Contact Current Max:20A; Contact Rating:20A; Leaded Process Compatible:Yes; Mounting Type:Panel; Peak Reflow Compatible (260 C):No; Switch Function:SPST-NO
THE CHERRY CORP
30CTH02 30CTH02-1 30CTH02FP 30CTH02S 200V 20A HyperFast Discrete Diode in a TO-220AB package
300V 20A HyperFast Discrete Diode in a TO-262 package
300V 20A HyperFast Discrete Diode in a TO-220 FullPak package
200V 30A HyperFast Discrete Diode in a D2-Pak package
International Rectifier
20ETS08FP 20ETS12FP 20ETS16FP 20ETS 20ETS08 20ETS1 SURFACE MOUNTABLE INPUT RECTIFIER DIODE
800V 20A Std. Recovery Diode in a TO-220AC Full-Pak (2-Pin)package
1200V 20A Std. Recovery Diode in a TO-220AC Full-Pak (2-Pin)package
1600V 20A Std. Recovery Diode in a TO-220AC Full-Pak (2-Pin)package
INPUTRECTIFIERDIODETO-220FULLPAK
SURFACEMOUNTABLEINPUTRECTIFIERDIODE
International Rectifier
InternationalRectifier
FDPF3860T 100V N-Channel PowerTrench MOSFET; Package: TO-220F; No of Pins: 3; Container: Rail
N-Channel PowerTrench㈢ MOSFET 100V, 20A, 38.2mヘ
N-Channel PowerTrench? MOSFET 100V, 20A, 38.2mΩ
FAIRCHILD SEMICONDUCTOR CORP
STGW20NB60H 6205 N-CHANNEL 20A - 600V TO-247 PowerMESH IGBT
N-CHANNEL 20A - 600V TO-247 PowerMESH TM IGBT
From old datasheet system
N-CHANNEL 20A - 600V TO-247 PowerMESH IGBT
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
 
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