| PART |
Description |
Maker |
| W3EG2256M72ASSR265JD3XG |
4GB - 2x256Mx72 DDR SDRAM REGISTERED ECC, w/PLL 4GB 2x256Mx72 ECC的DDR SDRAM的注册，瓦特/锁相
|
Bourns, Inc.
|
| M24512-WBN6 M24512-WBN6T M24512-WMW6T MM24512-WBN6 |
512 Kbit Serial I??Bus EEPROM
512 Kbit Serial IBus EEPROM 512千位串行I眷总线的EEPROM
CAP 3300UF 50V ELECT SMG RAD
512 Kbit Serial I? Bus EEPROM
512 Kbit Serial IC Bus EEPROM
512 Kbit Serial I裁 Bus EEPROM
512 KBIT SERIAL I²C BUS EEPROM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| IDT72V70800 IDT72V70800TF IDT72V70800PF |
512 x 512 Time Slot Interchange Digital Switch, 3.3V
TSI-TDM Switches
3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 512 x 512
|
IDT[Integrated Device Technology]
|
| IDT72V3634L10PF IDT72V3634L15PF8 |
3.3 VOLT CMOS SyncBiFIFO WITH BUS-MATCHING 256 x 36 x 2, 512 x 36 x 2, 1,024 x 36 x 2
512 X 36 BI-DIRECTIONAL FIFO, 10 ns, PQFP128
|
INTEGRATED DEVICE TECHNOLOGY INC
|
| AL4CA02 AL4CA03 AL4CA01 AL4CA04 AL4CA05 |
512/ 1K/ 2K/ 4K/ 8K x 9 Asynchronous FIFOs 512 /000 / 2K / 4K 8K的9异步FIFO
|
AverLogic Technologies, Inc.
AverLogic Technologies, Corp.
|
| H5TQ4G83AMR H5TQ4G43AMR |
4Gb DDR3 SDRAM
|
Hynix Semiconductor
|
| H5TQ4G43MFR H5TQ4G63MFR-PBC H5TQ4G43MFR-H9C H5TQ4G |
4Gb DDR3 SDRAM
|
Hynix Semiconductor
|
| HYS72T128000HR-3.7-A HYS72T128000HR-5-A HYS72T1280 |
256MB - 4GB, 240pin
|
Infineon
|
| TS4GJFV20 |
4GB USB2.0 JetFlash鈩20
|
Transcend Information. Inc.
|
| H5TC4G43MFR H5TC4G43MFR-G7A H5TC4G43MFR-H9A H5TC4G |
4Gb DDR3L SDRAM
|
Hynix Semiconductor
|
