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ENH-0635A -    Over Current Voltage Protection

ENH-0635A_8853749.PDF Datasheet


 Full text search :    Over Current Voltage Protection
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PART Description Maker
500L-058X181-502 500T-058X071-501 500T-058X071-502 5000:5 A, 1 % ACCURACY CLASS, CURRENT TRANSFORMER
500:5 A, 2 % ACCURACY CLASS, CURRENT TRANSFORMER
4000:5 A, 1 % ACCURACY CLASS, CURRENT TRANSFORMER
400:5 A, 3 % ACCURACY CLASS, CURRENT TRANSFORMER
750:5 A, 1 % ACCURACY CLASS, CURRENT TRANSFORMER
2500:5 A, 1 % ACCURACY CLASS, CURRENT TRANSFORMER
1000:5 A, 1 % ACCURACY CLASS, CURRENT TRANSFORMER
1200:5 A, 1 % ACCURACY CLASS, CURRENT TRANSFORMER
1500:5 A, 1 % ACCURACY CLASS, CURRENT TRANSFORMER
GE Industrial Systems
FS1UM-18A Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
HIGH-SPEED SWITCHING USE
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
FS1UM-16A Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
Powerex Power Semiconductors
Mitsubishi Electric Corporation
Z86L7908PSC Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):10A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-220; Current, It av:10A; Holding Current:50mA 8位微控制
INTEGRAL JOINT STOCK COMPANY
MG360V1US41 E002277 Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:50mA; Current, It av:12A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
From old datasheet system
Toshiba Corporation
Toshiba Semiconductor
Q62705-K151 KPY33-R Advanced PFC/PWM Combination Controllers 20-PDIP -40 to 105 相对硅压阻压力传感器
Standard Recovery Rectifier; Forward Current:20A; Forward Current Average:12.7A; Forward Current Avg Rectified, IF(AV):12.7A; Forward Surge Current Max, Ifsm:300A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
Silicon Piezoresistive Relative Pressure Sensor
Silicon Piezoresistive Relative Press...
Siemens Semiconductor G...
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
X4005S8-2.7 X4005S8-2.7A X4005S8-4.5A X4005S8I X40 RTC Module With CPU Supervisor 1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO8
DIODE, STUD 95A 1200VDIODE, STUD 95A 1200V; Voltage, Vrrm:1200V; Current, If av:95A; Current, Ifs max:1150A; Voltage, forward at If:1.5V; Case style:E12; Thread size:M8; Diode type:Standard recovery; Polarity, diode:Stud Catho
THYRISTOR, CAPSULE 600ATHYRISTOR, CAPSULE 600A; Voltage, Vrrm:1200V; Current, It av:600A; Case style:TO-200; Current, It rms:1400A; Current, Itsm:11500A; Voltage, Vgt:2.0V; Current, Igt:200mA; Diameter, External:57.3mm; Length /
Thyristor Module; Current, It av:150A; Repetitive Reverse Voltage Max, Vrrm:1600V; Peak Surge Current:1250A; di/dt:100A/ s; Package/Case:G62
Thyristor Diode Module; Repetitive Reverse Voltage Max, Vrrm:1200V; Current Rating:220A
Intersil, Corp.
INTERSIL[Intersil Corporation]
TS5204CY50 TS5204 TS5204CX TS5204CX1.8 TS5204CX18 Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):16A; Gate Trigger Current (QI), Igt:35mA; Current, It av:16A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
150mA Low Noise LDO Voltage Regulator
Taiwan Semiconductor Co., Ltd.
TSC[Taiwan Semiconductor Company, Ltd]
http://
PBA600F-15 PBA600F-24 PBA600F-36 PBA600F-12    40/40typ (Io=100%) (Primary inrush current /Secondary inrush current) (More than 3 sec. to re-start)
   AC3,000V 1minute, Cutoff current = 10mA, DC500V 50MWmin (At Room Temperature)
Total Power Internation...
CR180 CR022 CR300 CR200 CR240 Current Regulator Diodes
Diode Current Reg. 100V 0.242mA 2-Pin TO-18
Diode Current Reg. 135V 3.3mA 2-Pin TO-206AA
New Jersey Semi-Conductor Products, Inc.
New Jersey Semiconductors
New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
74AHCT259D 74AHC259D 74AHC259PW 74AHCT259PW HCT259 Zener Diode; Zener Voltage Typ, Vz:2.7V; Vz Test Current, Izt:20mA; Power Dissipation, Pd:500mW; Package/Case:DO-35; Breakdown Voltage Max:2.7V; Forward Current:200A; Leakage Current Max:100uA; Mounting Type:Through Hole 8位可寻址锁存
8-bit addressable latch
NXP Semiconductors N.V.
 
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ENH-0635A C代码 ENH-0635A external rom ENH-0635A silicon ENH-0635A Output ENH-0635A technology
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