PART |
Description |
Maker |
PUMH13115 PEMH13-PUMH13-15 |
NPN/NPN double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages. NPN/NPN resistor-equipped transistors R1 = 4.7 k? R2 = 47 k?
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NXP Semiconductors
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BFG520 BFG520_XR X BFG520_X BFG520XR BFG520/XR BFG |
NPN 9 GHz wideband transistor L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR NPN 9GHz wideband transistor(NPN 9G赫兹 宽带晶体
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NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
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BC550C BC550C_RR BC549 BC549C BC550 |
TRANSISTORSOT-54
TRANSISTOR|BJT|NPN|45VV(BR)CEO|100MAI(C)|TO-92
NPN general purpose transistors 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
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http:// PHILIPS[Philips Semiconductors] NXP Semiconductors N.V.
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FTM3725 |
NPN General Purpose Amplifier NPN Transistor 1200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, MS-012AC
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FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp.
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2N5682 2N5681 2N5681SMD |
100V Vce, 1A Ic, 30MHz NPN bipolar transistor NPN SILICON TRANSISTORS Expitaxial Planar NPN Transistors In jedec TO-39 Metal Case(大功率、外延平面NPN晶体管(TO-39金属封装,用于通用、放大器、开关电路))
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SEME-LAB[Seme LAB] Semelab(Magnatec)
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BDY96 |
TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 10A I(C) | TO-3 Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=350 / Ic=10 / Hfe=15-60 / fT(Hz)=10M / Pwr(W)=40
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Semelab
|
2SD773 2SD773U4 2SD773-L2-AZ |
2000 mA, 16 V, NPN, Si, SMALL SIGNAL TRANSISTOR TRANSISTOR | BJT | NPN | 16V V(BR)CEO | 2A I(C) | TO-221VAR NPN SILICON TRANSISTOR From old datasheet system
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NEC Corp. NEC[NEC]
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UPA812T-T1 UPA812 UPA812T UPA812TGB-T1 PA812T |
Low Noise, High Frequncy Amplifer NPN Transistor(楂??浣??澹版?澶у?NPN?朵?绠? Low Noise, High Frequncy Amplifer NPN Transistor(高频低噪声放大器NPN晶体 HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD TRANSISTOR | BJT | PAIR | NPN | 10V V(BR)CEO | 65MA I(C) | SOT-363
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NEC[NEC] NEC Corp.
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PEMH10 PUMH10 |
NPN/NPN resistor-equipped transistors; R1 = 2.2 k惟, R2 = 47 k惟 NPN/NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ NPN-NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 47 kOhm NPN-NPN配电阻型晶体管,R1=2.2千欧姆,R2=47千欧
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NXP Semiconductors N.V.
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PEMH13 PUMH13 |
NPN/NPN resistor-equipped transistors; R1 = 4.7 k惟, R2 = 47 k惟 NPN/NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ NPN-NPN resistor-equipped transistors; R1 = 4.7 kOhm, R2 = 47 kOhm NPN-NPN配电阻型晶体管,R1=4.7千欧姆,R2=47千欧
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NXP Semiconductors N.V.
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BFP25 BFP22 Q62702-F721 Q62702-F621 Q62702-F201 Q6 |
NPN Silicon Transistor with high Reve... From old datasheet system NPN Silicon Transistors with High Reverse Voltage Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84% NPN Silicon RF Transisrors NPN Silicon Transistors (High breakdown voltage l Low collector-emitter saturation voltage) NPN硅晶体管(高耐压l低集电极发射极饱和电压)
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SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
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