| PART |
Description |
Maker |
| CGH35030F |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
|
Cree, Inc.
|
| GP2001 |
RF POWER GAN TRANSISTOR
|
Polyfet RF Devices
|
| GX3442 |
RF POWER GAN TRANSISTOR
|
Polyfet RF Devices
|
| G22001 |
RF POWER GAN TRANSISTOR
|
Polyfet RF Devices
|
| A3G18H500-04S A3G18H500-04SR3 |
RF Power GaN Transistor
|
NXP Semiconductors
|
| CGH40010 |
10 W, RF Power GaN HEMT
|
CREE[Cree, Inc]
|
| CLF1G0035-100P CLF1G0035S-100P |
Broadband RF power GaN HEMT
|
NXP Semiconductors
|
| CG2H30070F |
70 W, 0.5?.0 GHz, 28 V, RF Power GaN HEMT
|
Cree, Inc
|
| TGA2622-CP TGA2622-CP-15 |
9 to 10 GHz 35 W GaN Power Amplifier
|
TriQuint Semiconductor
|
| TGA2623-CP TGA2623-CP-15 |
10 to 11 GHz 32 W GaN Power Amplifier
|
TriQuint Semiconductor
|
| TGI1314-50L |
MICROWAVE POWER GaN HEMT
|
Toshiba Semiconductor
|
| TG2000-10 |
GaN Hybrid Power Amplifier
|
RFHIC
|
|
