| PART |
Description |
Maker |
| PTCSGM3T071DBE PTCSGM3T081DBE PTCSGM3T091DBE PTCSG |
Well-defined protection temperature levels
|
Vishay Siliconix
|
| N1019A |
N1019A User Defined Application
|
Keysight Technologies
|
| OS21 |
The API defined in the OS21 User manual
|
STMicroelectronics
|
| SDR_3000 SDR-3001 SDR3000 |
Software Defined Radio Transceiver Platform 软件无线电收发平
|
List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
|
| NMA....SI |
Fusible Type Metal Film Resistors, Fusible resistor for constant current designed for overload protection, Flame retardant coating, Defined switch-off behavior
|
Vishay
|
| 24C04 ST25C04 ST25C04B1TR ST25C04B3TR ST25C04B5TR |
KIT, NIOS FOR CYCLONE II; Kit contents:Nios II Development Board, Nios II IDE, Quartus II Web Edition design software, SOPC Builder system integration tool, Cables and accessories, Design examples and applications RoHS Compliant: Yes
IC MAX 7000 CPLD 256 208-PQFP
PowerPak; Charge, gate n-channel:27nC; Current, Idm pulse:40A; Depth, external:5.26mm; RoHS Compliant: Yes
MOSFET, N SO-8MOSFET, N SO-8; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:80V; Case style:PowerPak SO-8; Current, Id cont:7.6A
(ST2xxx) 4 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection
From old datasheet system
4 Kbit Serial I 2 C Bus EEPROM with User-Defined Block Write Protection
4KbitSerialI2CBusEEPROMwithUser-DefinedBlockWriteProtection
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| ALMD-LB37-SU002 ALMD-LM37-24002 |
Well defined spatial radiation pattern
|
AVAGO TECHNOLOGIES LIMI...
|
| 24C16 ST25C16 ST25C16B1TR ST25C16B3TR ST25C16B5TR |
MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-6.4A; Package/Case:PowerPAK 1212-8 16千位串行I2C总线的EEPROM与用户定义的块写保护
16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection 16千位串行I2C总线的EEPROM与用户定义的块写保护
MOSFET, DUAL NN POWERPAKMOSFET, DUAL NN POWERPAK; Transistor type:MOSFET; Transistor polarity:Dual N; Voltage, Vds max:100V; Case style:PowerPak SO-8; Current, Id cont:1.8A; Current, Idm pulse:10A; Power, Pd:1.3W; Resistance, Rds
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-3.6A; On-Resistance, Rds(on):0.065ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:MICRO FOOT; Leaded Process Compatible:No
MOSFET, DUAL, PP, POWERPAK; Transistor type:MOSFET; Current, Id cont:7A; Resistance, Rds on:0.02R; Voltage, Vgs Rds on measurement:10V; Case style:SO-8 PowerPak; Charge, gate p channel:49nC; Current, Idm pulse:30A; Depth, RoHS Compliant: Yes
(ST2xxx) 16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection
16/8/4/2/1KbitSerialICBusEEPROM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
|
