| PART |
Description |
Maker |
| NGTB30N120IHL |
IGBT 1200V 30A FS1 Induction Heating
|
ON Semiconductor
|
| RJH1CM6DPQ-E0 |
1200V - 20A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| NCE20G120T |
1200V, 20A, Trench NPT IGBT
|
Wuxi NCE Power Semiconductor Co., Ltd
|
| GB10XF120K |
1200V 20A Low Vce Non Punch Through IGBT in a Econo2 6PACK Package
|
International Rectifier
|
| IHW40T120 |
IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
IGBTs & DuoPacks - 40A / 1200V IGBT and 18A / 1200V Diode in DuoPack
|
Infineon Technologies AG
|
| HGTG30N120CN HGTG30N120D2 |
30A/ 1200V N-Channel IGBT
30A, 1200V N-Channel IGBT
75A 1200V NPT Series N-Channel IGBT
|
INTERSIL[Intersil Corporation]
http://
|
| G20N120 HGTG20N120CND |
63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(63A, 1200V, NPT 系列带超快二极管的N沟道绝缘栅双极型晶体 20 A, 1200 V, N-CHANNEL IGBT, TO-247
From old datasheet system
63A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| ISL9G1260EP3 ISL9G1260ES3 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-220AB
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展|甲一（c）|63AB
|
Hynix Semiconductor, Inc.
|
