| PART |
Description |
Maker |
| 250959B |
Typical 1dB bandwidth of 9.2 MHz
|
Integrated Technology F...
|
| 250960B |
Typical 1dB bandwidth of 9.3 MHz
|
Integrated Technology F...
|
| 250958B |
Typical 1dB bandwidth of 9.1 MHz
|
Integrated Technology F...
|
| 250917B |
Typical 1dB bandwidth of 9.2MHz
|
Integrated Technology F...
|
| 251932B |
Typical 1dB bandwidth of 18.9 MHz
|
Integrated Technology F...
|
| 250121B |
Typical 1dB bandwidth of 1.4 MHz
|
Integrated Technology F...
|
| 231601B |
Typical 1dB bandwidth of 15.6 MHz
|
Integrated Technology F...
|
| 233005B |
Typical 1dB bandwidth of 30.0 MHz
|
Integrated Technology F...
|
| 250236B |
Typical 1dB bandwidth of 1.8 MHz
|
Integrated Technology F...
|
| AD8375ACPZ-REEL7 AD8375ACPZ-WP AD8375 AD8375-EVALZ |
24dB Range, 1dB Step Size Programmable VGA
|
AD[Analog Devices]
|
| BGA318 Q62702-G0043 |
From old datasheet system
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) 硅双极单片放大器（级0瓦，增益模块十六分贝典型增益.0 GHz2 dBm典型的P - 1dB的在1.0千兆赫）
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) 0 MHz - 1200 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| HMC335G1608 |
1dB LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR, DC - 3 GHz
|
Hittite Microwave Corporation
Hittite Microwave Corpo...
|
