| PART |
Description |
Maker |
| FMX-32S FMN-G12S FMP-G12S |
200V,Ultra-Fast-Recovery Rectifier Diodes(200V，超快恢复整流二极管)
|
http://
SANKEN[Sanken electric]
Sanken Electric Co.,Ltd.
|
| CDBB5200-HF |
Halogen Free Schottky Barrier Diodes, V-RRM=200V, V-R=200V, I-O=5A
|
Comchip Technology
|
| OM6039SM |
200V , 9 Amp, N-Channel Power MOSFET(200V , 9A,N沟道，功率MOS场效应管) 00V安培，N沟道功率MOSFET（为200V9A条，沟道，功率马鞍山场效应管
|
HIROSE ELECTRIC Co., Ltd.
|
| OM6035NM |
200V, N-Channel, 30Amp MOSFET(200V ,30A, N沟道，MOS场效应管) 00V，N沟道30Amp MOSFET的（00V0A条，沟道来说，MOS场效应管
|
Omnirel
International Rectifier, Corp.
|
| FQI10N20 FQB10N20 FQB10N20TM |
200V N-Channel QFET
200V N-Channel MOSFET
CAP 2200PF 100V 10% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22
|
http://
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| IRFS250 IRFS250B IRFS250BFP001 |
200V N-Channel B-FET / Substitute of IRFS250 & IRFS250A
200V N-Channel MOSFET
|
Fairchild Semiconductor
|
| IRFU220N IRFR220N IRFR220NTR IRFR220NTRL IRFR220NT |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 5A I(D) | TO-252AA 晶体管| MOSFET的| N沟道| 200伏五（巴西）直| 5A条（丁）|52AA
Power MOSFET(Vdss=200V, Rds(on)max=600mohm, Id=5.0A)
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRF650 IRF650B IRFS650B IRF650BFP001 |
200V N-Channel B-FET / Substitute of IRF650A
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQPF10N20L |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 6.8A I(D) | TO-220F 晶体管| MOSFET的| N沟道| 200伏五（巴西）直| 6.8AI（四）|20F
200V LOGIC N-Channel MOSFET
|
Fairchild Semiconductor, Corp.
|
| IRFNL210B EA0610P |
200V N-Channel MOSFET
200V N-Channel B-FET TO-92L
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRF9630S IRF9630STRL IRF9630STRR |
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A)
Power MOSFET(Vdss=-200V/ Rds(on)=0.80ohm/ Id=-6.5A)
|
IRF[International Rectifier]
|
