| PART |
Description |
Maker |
| HYMR16416 HYMR16418H-840 |
32Mx16|2.5V|40|-|Direct RDRAM - 64MB RIMM
64M X 18 DIRECT RAMBUS DRAM MODULE, 40 ns, DMA184 RIMM-184
|
Hynix Semiconductor, Inc.
|
| K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 |
256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz.
K4R271669B:Direct RDRAMData Sheet
256K x 16/18 bit x 32s banks Direct RDRAMTM
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| MC-4R128CEE6C-845 MC-4R128CEE6B MC-4R128CEE6B-653 |
64M X 16 DIRECT RAMBUS DRAM MODULE, 53 ns, DMA184
Direct Rambus DRAM RIMM Module 128M-BYTE 64M-WORD x 16-BIT
|
NEC Corp.
NEC[NEC]
|
| HYR1612820 HYR183220G-840 HYR1612820G-653 HYR18642 |
Direct RDRAM RIMM Modules (with 144 Mbit RDRAMs) 直接的RDRAM RIMM的模块（44兆RDRAMs
CONN HEADER .100 DUAL STR 72POS
CONN HEADER .100 DUAL R/A 72POS
128M X 16 DIRECT RAMBUS DRAM MODULE, 2.06 ns, DMA184
|
INFINEON[Infineon Technologies AG]
|
| MC-4R256CPE6C-845 MC-4R256CPE6C MC-4R256CPE6C-653 |
Direct Rambus DRAM RIMM Module 256M-BYTE 128M-WORD x 16-BIT
128M X 16 DIRECT RAMBUS DRAM MODULE, 45 ns, DMA184 RIMM-184
|
http://
NEC[NEC]
NEC Corp.
Performance Semiconductor, Corp.
|
| LC0408FC3.3C LC0408FC05C |
Direct ProTek Replacement:LC0408FC3.3C
Direct ProTek Replacement:LC0408FC05C 直接太克替代：LC0408FC05C
|
ProTek Devices
|
| UPD488448 UPD488448FB-C60-53-DQ1 UPD488448FB-C60-5 |
128 M-bit Direct Rambus⑩ DRAM
128 M-bit Direct Rambus DRAM
|
NEC[NEC]
|
| EDR2518ABSE-8C EDR2518ABSE-8C-E EDR2518ABSE-AD-E E |
CHOKE RF HI CURRENT 150UH 10%
Circular Connector; No. of Contacts:37; Series:MS27467; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:15; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:15-35 RoHS Compliant: No
288M bits Direct Rambus DRAM 16M X 18 DIRECT RAMBUS DRAM, PBGA80
|
Elpida Memory, Inc.
ELPIDA MEMORY INC
|
| HD74LS161A |
Synchronous 4-bit Binary Counter with Direct Clear
Synchronous 4-bit Binary Counters(direct clear)
|
HITACHI[Hitachi Semiconductor]
|
| MB54608B MB54608L MB54608LPFV MB54608LPV1 |
1.0 GHz band Low Power I/Q Modulator For Direct Conversion 800 MHz - 1000 MHz RF/MICROWAVE I/Q MODULATOR
1.0 GHz band Low Power I/Q Modulator For Direct Conversion 1.0 GHz频段的低功率的I / Q调制器的直接转换
|
Fujitsu Microelectronics
Fujitsu Component Limited.
FUJITSU[Fujitsu Media Devices Limited]
Fujitsu, Ltd.
|
| EBR51UC8ABKD-8C EBR51UC8ABKD-AD EBR51UC8ABKD-AE EB |
512MB 32-bit Direct Rambus DRAM RIMM垄芒 Module
512MB 32-bit Direct Rambus DRAM RIMM Module
512MB 32-bit Direct Rambus DRAM RIMM?/a> Module
|
Elpida Memory
|
